Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun Hu Cheng; Chia Chi Fan; Hsiao Hsuan Hsu; Shih An Wang; Chun Yen Chang

doi:10.1002/pssr.201800493

Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun Hu Cheng^*, Chia Chi Fan, Hsiao Hsuan Hsu, Shih An Wang, Chun Yen Chang

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Letter › peer-review

4 Citations (Scopus)

Abstract

A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlO_x) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec⁻¹ for symmetric switch, a wide sub-60 mV (dec·swing)⁻¹ range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm⁻¹, and a high on/off current ratio of >10⁸. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlO_x to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

Original language	English
Article number	1800493
Journal	Physica Status Solidi - Rapid Research Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1002/pssr.201800493
Publication status	Published - 2019 Feb 1

Keywords

aluminum-doped hafnium oxide
ferroelectrics
fluorine passivation
negative capacitance

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

Access to Document

10.1002/pssr.201800493

Cite this

@article{768630eb86a04aed9b90b6aaebeaa63a,

title = "Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering",

abstract = "A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.",

keywords = "aluminum-doped hafnium oxide, ferroelectrics, fluorine passivation, negative capacitance",

author = "Cheng, {Chun Hu} and Fan, {Chia Chi} and Hsu, {Hsiao Hsuan} and Wang, {Shih An} and Chang, {Chun Yen}",

note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2019",

month = feb,

day = "1",

doi = "10.1002/pssr.201800493",

language = "English",

volume = "13",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "2",

}

TY - JOUR

T1 - Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

AU - Cheng, Chun Hu

AU - Fan, Chia Chi

AU - Hsu, Hsiao Hsuan

AU - Wang, Shih An

AU - Chang, Chun Yen

PY - 2019/2/1

Y1 - 2019/2/1

N2 - A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

AB - A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

KW - aluminum-doped hafnium oxide

KW - ferroelectrics

KW - fluorine passivation

KW - negative capacitance

UR - http://www.scopus.com/inward/record.url?scp=85056163456&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056163456&partnerID=8YFLogxK

U2 - 10.1002/pssr.201800493

DO - 10.1002/pssr.201800493

M3 - Letter

AN - SCOPUS:85056163456

SN - 1862-6254

VL - 13

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 2

M1 - 1800493

ER -

Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this