Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun Hu Cheng, Chia Chi Fan, Hsiao Hsuan Hsu, Shih An Wang, Chun Yen Chang

Research output: Contribution to journalLetter

Abstract

A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

Original languageEnglish
Article number1800493
JournalPhysica Status Solidi - Rapid Research Letters
Volume13
Issue number2
DOIs
Publication statusPublished - 2019 Feb 1

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Keywords

  • aluminum-doped hafnium oxide
  • ferroelectrics
  • fluorine passivation
  • negative capacitance

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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