Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun Hu Cheng; Chia Chi Fan; Hsiao Hsuan Hsu; Shih An Wang; Chun Yen Chang

doi:10.1002/pssr.201800493

Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun Hu Cheng, Chia Chi Fan, Hsiao Hsuan Hsu, Shih An Wang, Chun Yen Chang

Department of Mechatronic Engineering

Research output: Contribution to journal › Letter

1 Citation (Scopus)

Abstract

A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlO_x) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec⁻¹ for symmetric switch, a wide sub-60 mV (dec·swing)⁻¹ range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm⁻¹, and a high on/off current ratio of >10⁸. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlO_x to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

Original language	English
Article number	1800493
Journal	Physica Status Solidi - Rapid Research Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1002/pssr.201800493
Publication status	Published - 2019 Feb 1

Keywords

aluminum-doped hafnium oxide
ferroelectrics
fluorine passivation
negative capacitance

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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Cheng, C. H., Fan, C. C., Hsu, H. H., Wang, S. A., & Chang, C. Y. (2019). Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering. Physica Status Solidi - Rapid Research Letters, 13(2), [1800493]. https://doi.org/10.1002/pssr.201800493

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abstract = "A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.",

keywords = "aluminum-doped hafnium oxide, ferroelectrics, fluorine passivation, negative capacitance",

author = "Cheng, {Chun Hu} and Fan, {Chia Chi} and Hsu, {Hsiao Hsuan} and Wang, {Shih An} and Chang, {Chun Yen}",

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AU - Cheng, Chun Hu

AU - Fan, Chia Chi

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AU - Wang, Shih An

AU - Chang, Chun Yen

PY - 2019/2/1

Y1 - 2019/2/1

N2 - A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

AB - A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

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KW - ferroelectrics

KW - fluorine passivation

KW - negative capacitance

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