Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun Hu Cheng; Chia Chi Fan; Hsiao Hsuan Hsu; Shih An Wang; Chun Yen Chang

doi:10.1002/pssr.201800493

Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun Hu Cheng, Chia Chi Fan, Hsiao Hsuan Hsu, Shih An Wang, Chun Yen Chang

Department of Mechatronic Engineering

Research output: Contribution to journal › Letter

Abstract

A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlO_x) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec⁻¹ for symmetric switch, a wide sub-60 mV (dec·swing)⁻¹ range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm⁻¹, and a high on/off current ratio of >10⁸. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlO_x to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

Original language	English
Article number	1800493
Journal	Physica Status Solidi - Rapid Research Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1002/pssr.201800493
Publication status	Published - 2019 Feb 1

Keywords

aluminum-doped hafnium oxide
ferroelectrics
fluorine passivation
negative capacitance

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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10.1002/pssr.201800493

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Cheng, C. H., Fan, C. C., Hsu, H. H., Wang, S. A., & Chang, C. Y. (2019). Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering. Physica Status Solidi - Rapid Research Letters, 13(2), [1800493]. https://doi.org/10.1002/pssr.201800493

@article{2980dcbe69ba4c2e897a829cb6a72e55,

title = "Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering",

abstract = "A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.",

keywords = "aluminum-doped hafnium oxide, ferroelectrics, fluorine passivation, negative capacitance",

author = "Cheng, {Chun Hu} and Fan, {Chia Chi} and Hsu, {Hsiao Hsuan} and Wang, {Shih An} and Chang, {Chun Yen}",

year = "2019",

month = feb,

day = "1",

doi = "10.1002/pssr.201800493",

language = "English",

volume = "13",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "2",

}

TY - JOUR

T1 - Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

AU - Cheng, Chun Hu

AU - Fan, Chia Chi

AU - Hsu, Hsiao Hsuan

AU - Wang, Shih An

AU - Chang, Chun Yen

PY - 2019/2/1

Y1 - 2019/2/1

N2 - A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

AB - A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.

KW - aluminum-doped hafnium oxide

KW - ferroelectrics

KW - fluorine passivation

KW - negative capacitance

UR - http://www.scopus.com/inward/record.url?scp=85056163456&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056163456&partnerID=8YFLogxK

U2 - 10.1002/pssr.201800493

DO - 10.1002/pssr.201800493

M3 - Letter

AN - SCOPUS:85056163456

VL - 13

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 2

M1 - 1800493

ER -