TY - JOUR
T1 - Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering
AU - Cheng, Chun Hu
AU - Fan, Chia Chi
AU - Hsu, Hsiao Hsuan
AU - Wang, Shih An
AU - Chang, Chun Yen
N1 - Funding Information:
The authors would like to thank the National Science Council in Taiwan for financial supports (106-2628-E-003-001-MY2).
Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2019/2/1
Y1 - 2019/2/1
N2 - A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.
AB - A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec−1 for symmetric switch, a wide sub-60 mV (dec·swing)−1 range over 4 decades of drain current, an ultralow off-leakage current of 4 fA μm−1, and a high on/off current ratio of >108. The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.
KW - aluminum-doped hafnium oxide
KW - ferroelectrics
KW - fluorine passivation
KW - negative capacitance
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UR - http://www.mendeley.com/research/improved-negativecapacitance-switch-ferroelectric-field-effect-transistor-using-defect-passivation-e
U2 - 10.1002/pssr.201800493
DO - 10.1002/pssr.201800493
M3 - Letter
AN - SCOPUS:85056163456
VL - 13
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 2
M1 - 1800493
ER -