@inproceedings{be9121e18e8c4c13b4c77c33a38a13e6,
title = "Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment",
abstract = "We have fabricated high-κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual plasma treatment on bottom electrode. The novel plasma treatment suppresses the growth of bottom interfacial layer to reduce the degradation of capacitor performance under 400°C PDA. A low leakage current of 1.7 10-7 A/cm2 at -1 V and capacitance density of -18 fF/μm2 at 1 MHz were obtained for 21 nm thick TiCeO MIM devices; moreover, a 37 nm thick TiCeO film has a capacitance density of 11 fF/μm 2, which gives a k value of 45. Consequently, the excellent device performance is due to the combined effects of the dual plasma treatment, high-κ TiCeO dielectric and a high work-function Ir metal.",
author = "Cheng, {C. H.} and Hsu, {H. H.} and Deng, {C. K.} and Albert Chin and Chou, {C. P.}",
year = "2009",
doi = "10.1149/1.2981614",
language = "English",
isbn = "9781566776516",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "323--333",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6",
edition = "5",
note = "Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 15-10-2008",
}