Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment

C. H. Cheng, H. H. Hsu, C. K. Deng, Albert Chin, C. P. Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have fabricated high-κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual plasma treatment on bottom electrode. The novel plasma treatment suppresses the growth of bottom interfacial layer to reduce the degradation of capacitor performance under 400°C PDA. A low leakage current of 1.7 10-7 A/cm2 at -1 V and capacitance density of -18 fF/μm2 at 1 MHz were obtained for 21 nm thick TiCeO MIM devices; moreover, a 37 nm thick TiCeO film has a capacitance density of 11 fF/μm 2, which gives a k value of 45. Consequently, the excellent device performance is due to the combined effects of the dual plasma treatment, high-κ TiCeO dielectric and a high work-function Ir metal.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Pages323-333
Number of pages11
Edition5
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes
EventPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 15

Publication series

NameECS Transactions
Number5
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/15

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Cheng, C. H., Hsu, H. H., Deng, C. K., Chin, A., & Chou, C. P. (2008). Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 323-333). (ECS Transactions; Vol. 16, No. 5). https://doi.org/10.1149/1.2981614