Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment

Chun-Hu Cheng, H. H. Hsu, C. K. Deng, Albert Chin, C. P. Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have fabricated high-κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual plasma treatment on bottom electrode. The novel plasma treatment suppresses the growth of bottom interfacial layer to reduce the degradation of capacitor performance under 400°C PDA. A low leakage current of 1.7 10-7 A/cm2 at -1 V and capacitance density of -18 fF/μm2 at 1 MHz were obtained for 21 nm thick TiCeO MIM devices; moreover, a 37 nm thick TiCeO film has a capacitance density of 11 fF/μm 2, which gives a k value of 45. Consequently, the excellent device performance is due to the combined effects of the dual plasma treatment, high-κ TiCeO dielectric and a high work-function Ir metal.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Pages323-333
Number of pages11
Edition5
DOIs
Publication statusPublished - 2008 Dec 1
EventPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 15

Publication series

NameECS Transactions
Number5
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/15

Fingerprint

Capacitors
Plasmas
Oxidation
Electrodes
MIM devices
Capacitance
Metals
Personal digital assistants
Thick films
Leakage currents
Degradation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Cheng, C-H., Hsu, H. H., Deng, C. K., Chin, A., & Chou, C. P. (2008). Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 323-333). (ECS Transactions; Vol. 16, No. 5). https://doi.org/10.1149/1.2981614

Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment. / Cheng, Chun-Hu; Hsu, H. H.; Deng, C. K.; Chin, Albert; Chou, C. P.

ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. 2008. p. 323-333 (ECS Transactions; Vol. 16, No. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cheng, C-H, Hsu, HH, Deng, CK, Chin, A & Chou, CP 2008, Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 edn, ECS Transactions, no. 5, vol. 16, pp. 323-333, Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting, Honolulu, HI, United States, 08/10/13. https://doi.org/10.1149/1.2981614
Cheng C-H, Hsu HH, Deng CK, Chin A, Chou CP. Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 ed. 2008. p. 323-333. (ECS Transactions; 5). https://doi.org/10.1149/1.2981614
Cheng, Chun-Hu ; Hsu, H. H. ; Deng, C. K. ; Chin, Albert ; Chou, C. P. / Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment. ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. 2008. pp. 323-333 (ECS Transactions; 5).
@inproceedings{763a073169a64207b8d13b7a43b55bcb,
title = "Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment",
abstract = "We have fabricated high-κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual plasma treatment on bottom electrode. The novel plasma treatment suppresses the growth of bottom interfacial layer to reduce the degradation of capacitor performance under 400°C PDA. A low leakage current of 1.7 10-7 A/cm2 at -1 V and capacitance density of -18 fF/μm2 at 1 MHz were obtained for 21 nm thick TiCeO MIM devices; moreover, a 37 nm thick TiCeO film has a capacitance density of 11 fF/μm 2, which gives a k value of 45. Consequently, the excellent device performance is due to the combined effects of the dual plasma treatment, high-κ TiCeO dielectric and a high work-function Ir metal.",
author = "Chun-Hu Cheng and Hsu, {H. H.} and Deng, {C. K.} and Albert Chin and Chou, {C. P.}",
year = "2008",
month = "12",
day = "1",
doi = "10.1149/1.2981614",
language = "English",
isbn = "9781566776516",
series = "ECS Transactions",
number = "5",
pages = "323--333",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6",
edition = "5",

}

TY - GEN

T1 - Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment

AU - Cheng, Chun-Hu

AU - Hsu, H. H.

AU - Deng, C. K.

AU - Chin, Albert

AU - Chou, C. P.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We have fabricated high-κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual plasma treatment on bottom electrode. The novel plasma treatment suppresses the growth of bottom interfacial layer to reduce the degradation of capacitor performance under 400°C PDA. A low leakage current of 1.7 10-7 A/cm2 at -1 V and capacitance density of -18 fF/μm2 at 1 MHz were obtained for 21 nm thick TiCeO MIM devices; moreover, a 37 nm thick TiCeO film has a capacitance density of 11 fF/μm 2, which gives a k value of 45. Consequently, the excellent device performance is due to the combined effects of the dual plasma treatment, high-κ TiCeO dielectric and a high work-function Ir metal.

AB - We have fabricated high-κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual plasma treatment on bottom electrode. The novel plasma treatment suppresses the growth of bottom interfacial layer to reduce the degradation of capacitor performance under 400°C PDA. A low leakage current of 1.7 10-7 A/cm2 at -1 V and capacitance density of -18 fF/μm2 at 1 MHz were obtained for 21 nm thick TiCeO MIM devices; moreover, a 37 nm thick TiCeO film has a capacitance density of 11 fF/μm 2, which gives a k value of 45. Consequently, the excellent device performance is due to the combined effects of the dual plasma treatment, high-κ TiCeO dielectric and a high work-function Ir metal.

UR - http://www.scopus.com/inward/record.url?scp=63149131430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63149131430&partnerID=8YFLogxK

U2 - 10.1149/1.2981614

DO - 10.1149/1.2981614

M3 - Conference contribution

SN - 9781566776516

T3 - ECS Transactions

SP - 323

EP - 333

BT - ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6

ER -