Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

Zhi Wei Zheng; Hsiao Hsuan Hsu; Chun Hu Cheng; Po Chun Chen

doi:10.1002/pssr.201409039

Improved high-temperature switching characteristics of Y₂O₃/TiO_x resistive memory through carrier depletion effect

Zhi Wei Zheng, Hsiao Hsuan Hsu, Chun Hu Cheng^*, Po Chun Chen

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report a stacked Y₂O₃/TiO_x resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ~300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiO_x and the related carrier depletion effect.

Original language	English
Pages (from-to)	431-435
Number of pages	5
Journal	Physica Status Solidi - Rapid Research Letters
Volume	8
Issue number	5
DOIs	https://doi.org/10.1002/pssr.201409039
Publication status	Published - 2014 May

Keywords

Carrier depletion
Resisitive switching
Resistive random access memories

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

Access to Document

10.1002/pssr.201409039

Cite this

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abstract = "We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ~300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.",

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AU - Chen, Po Chun

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AB - We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ~300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.

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