Improved high-temperature switching characteristics of Y 2 O 3 /TiO x resistive memory through carrier depletion effect

Zhi Wei Zheng, Hsiao Hsuan Hsu, Chun Hu Cheng, Po Chun Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report a stacked Y 2 O 3 /TiO x resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ~300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiO x and the related carrier depletion effect.

Original languageEnglish
Pages (from-to)431-435
Number of pages5
JournalPhysica Status Solidi - Rapid Research Letters
Volume8
Issue number5
DOIs
Publication statusPublished - 2014 May

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Keywords

  • Carrier depletion
  • Resisitive switching
  • Resistive random access memories

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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