Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

C. H. Cheng; H. C. Pan; H. J. Yang; C. N. Hsiao; C. P. Chou; S. P. McAlister; Albert Chin

doi:10.1109/LED.2007.909612

Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

C. H. Cheng^*
, H. C. Pan
, H. J. Yang
, C. N. Hsiao
, C. P. Chou
, S. P. McAlister
, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10^-7 A/ cm² was obtained at 125 °C for 24-fF/μm² density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.

Original language	English
Pages (from-to)	1095-1097
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	12
DOIs	https://doi.org/10.1109/LED.2007.909612
Publication status	Published - 2007 Dec
Externally published	Yes

Keywords

High-temperature techniques
High-κ
Ir
MIM devices
Metal-insulator-metal (MIM)
TiLaO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2007.909612

Cite this

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title = "Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode",

abstract = "We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10-7 A/ cm2 was obtained at 125 °C for 24-fF/μm2 density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.",

keywords = "High-temperature techniques, High-κ, Ir, MIM devices, Metal-insulator-metal (MIM), TiLaO",

author = "Cheng, \{C. H.\} and Pan, \{H. C.\} and Yang, \{H. J.\} and Hsiao, \{C. N.\} and Chou, \{C. P.\} and McAlister, \{S. P.\} and Albert Chin",

note = "Funding Information: Manuscript received August 16, 2007; revised September 26, 2007. This work was supported in part by NSC 95-2221-E-009-275 of Taiwan. The review of this letter was arranged by Editor A. Wang. C. H. Cheng and C. P. Chou are with the Department of Mechanical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C. H. C. Pan and C. N. Hsiao are with the Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, Taiwan, R.O.C. H. J. Yang and A. Chin are with the Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C. (e-mail: albert\[email protected]; [email protected]). S. P. McAlister is with the National Research Council of Canada, Ottawa, ON K1A 0R6, Canada. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2007.909612",

year = "2007",

month = dec,

doi = "10.1109/LED.2007.909612",

language = "English",

volume = "28",

pages = "1095--1097",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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AU - Cheng, C. H.

AU - Pan, H. C.

AU - Yang, H. J.

AU - Hsiao, C. N.

AU - Chou, C. P.

AU - McAlister, S. P.

AU - Chin, Albert

N1 - Funding Information: Manuscript received August 16, 2007; revised September 26, 2007. This work was supported in part by NSC 95-2221-E-009-275 of Taiwan. The review of this letter was arranged by Editor A. Wang. C. H. Cheng and C. P. Chou are with the Department of Mechanical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C. H. C. Pan and C. N. Hsiao are with the Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, Taiwan, R.O.C. H. J. Yang and A. Chin are with the Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C. (e-mail: [email protected]; [email protected]). S. P. McAlister is with the National Research Council of Canada, Ottawa, ON K1A 0R6, Canada. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2007.909612

PY - 2007/12

Y1 - 2007/12

N2 - We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10-7 A/ cm2 was obtained at 125 °C for 24-fF/μm2 density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.

AB - We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10-7 A/ cm2 was obtained at 125 °C for 24-fF/μm2 density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.

KW - High-temperature techniques

KW - High-κ

KW - Ir

KW - MIM devices

KW - Metal-insulator-metal (MIM)

KW - TiLaO

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

Abstract

Keywords

ASJC Scopus subject areas

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