Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

C. H. Cheng, H. C. Pan, H. J. Yang, C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10-7 A/ cm2 was obtained at 125 °C for 24-fF/μm2 density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.

Original languageEnglish
Pages (from-to)1095-1097
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

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Capacitors
Metals
Electrodes
Conduction bands
Leakage currents
Temperature

Keywords

  • High-temperature techniques
  • High-κ
  • Ir
  • MIM devices
  • Metal-insulator-metal (MIM)
  • TiLaO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode. / Cheng, C. H.; Pan, H. C.; Yang, H. J.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert.

In: IEEE Electron Device Letters, Vol. 28, No. 12, 01.12.2007, p. 1095-1097.

Research output: Contribution to journalArticle

Cheng, C. H. ; Pan, H. C. ; Yang, H. J. ; Hsiao, C. N. ; Chou, C. P. ; McAlister, S. P. ; Chin, Albert. / Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 12. pp. 1095-1097.
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AU - Cheng, C. H.

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AU - Hsiao, C. N.

AU - Chou, C. P.

AU - McAlister, S. P.

AU - Chin, Albert

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