Abstract
We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10-7 A/ cm2 was obtained at 125 °C for 24-fF/μm2 density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.
Original language | English |
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Pages (from-to) | 1095-1097 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 28 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2007 Dec |
Keywords
- High-temperature techniques
- High-κ
- Ir
- MIM devices
- Metal-insulator-metal (MIM)
- TiLaO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering