@article{7161b58c559a43c599dadce33899295f,
title = "Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode",
abstract = "We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10-7 A/ cm2 was obtained at 125 °C for 24-fF/μm2 density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.",
keywords = "High-temperature techniques, High-κ, Ir, MIM devices, Metal-insulator-metal (MIM), TiLaO",
author = "Cheng, {C. H.} and Pan, {H. C.} and Yang, {H. J.} and Hsiao, {C. N.} and Chou, {C. P.} and McAlister, {S. P.} and Albert Chin",
note = "Funding Information: Manuscript received August 16, 2007; revised September 26, 2007. This work was supported in part by NSC 95-2221-E-009-275 of Taiwan. The review of this letter was arranged by Editor A. Wang. C. H. Cheng and C. P. Chou are with the Department of Mechanical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C. H. C. Pan and C. N. Hsiao are with the Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, Taiwan, R.O.C. H. J. Yang and A. Chin are with the Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C. (e-mail: albert_achin@hotmail.com; achin@cc.nctu.edu.tw). S. P. McAlister is with the National Research Council of Canada, Ottawa, ON K1A 0R6, Canada. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2007.909612 Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",
year = "2007",
month = dec,
doi = "10.1109/LED.2007.909612",
language = "English",
volume = "28",
pages = "1095--1097",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}