Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

C. H. Cheng; H. C. Pan; H. J. Yang; C. N. Hsiao; C. P. Chou; S. P. McAlister; Albert Chin

doi:10.1109/LED.2007.909612

Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

C. H. Cheng, H. C. Pan, H. J. Yang, C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin

Department of Mechatronic Engineering

Research output: Contribution to journal › Article

48 Citations (Scopus)

Abstract

We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10^-7 A/ cm² was obtained at 125 °C for 24-fF/μm² density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.

Original language	English
Pages (from-to)	1095-1097
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	12
DOIs	https://doi.org/10.1109/LED.2007.909612
Publication status	Published - 2007 Dec

Keywords

High-temperature techniques
High-κ
Ir
MIM devices
Metal-insulator-metal (MIM)
TiLaO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.909612

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Cheng, C. H., Pan, H. C., Yang, H. J., Hsiao, C. N., Chou, C. P., McAlister, S. P., & Chin, A. (2007). Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode. IEEE Electron Device Letters, 28(12), 1095-1097. https://doi.org/10.1109/LED.2007.909612

@article{7161b58c559a43c599dadce33899295f,

title = "Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode",

abstract = "We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10-7 A/ cm2 was obtained at 125 °C for 24-fF/μm2 density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.",

keywords = "High-temperature techniques, High-κ, Ir, MIM devices, Metal-insulator-metal (MIM), TiLaO",

author = "Cheng, {C. H.} and Pan, {H. C.} and Yang, {H. J.} and Hsiao, {C. N.} and Chou, {C. P.} and McAlister, {S. P.} and Albert Chin",

year = "2007",

month = dec,

doi = "10.1109/LED.2007.909612",

language = "English",

volume = "28",

pages = "1095--1097",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

AU - Cheng, C. H.

AU - Pan, H. C.

AU - Yang, H. J.

AU - Hsiao, C. N.

AU - Chou, C. P.

AU - McAlister, S. P.

AU - Chin, Albert

PY - 2007/12

Y1 - 2007/12

N2 - We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10-7 A/ cm2 was obtained at 125 °C for 24-fF/μm2 density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.

AB - We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10-7 A/ cm2 was obtained at 125 °C for 24-fF/μm2 density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.

KW - High-temperature techniques

KW - High-κ

KW - Ir

KW - MIM devices

KW - Metal-insulator-metal (MIM)

KW - TiLaO

UR - http://www.scopus.com/inward/record.url?scp=36648998773&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36648998773&partnerID=8YFLogxK

U2 - 10.1109/LED.2007.909612

DO - 10.1109/LED.2007.909612

M3 - Article

AN - SCOPUS:36648998773

VL - 28

SP - 1095

EP - 1097

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

ER -