Improved ESD Protection Design for High-Frequency Applications in CMOS Technology

Meng Ting Lin; Chun Yu Lin

doi:10.1109/IRMMW-THz.2018.8509852

Improved ESD Protection Design for High-Frequency Applications in CMOS Technology

Meng Ting Lin, Chun Yu Lin

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An improved electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power-rail ESD clamp circuit is presented to protect the high-frequency integrated circuits in CMOS process. Experimental results show that the improved design can achieve higher ESD robustness without degrading the high-frequency performance. Based on its good performances during ESD stress and high-frequency operating conditions, the improved design is very suitable for ESD protection.

Original language	English
Title of host publication	2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538638095
DOIs	https://doi.org/10.1109/IRMMW-THz.2018.8509852
Publication status	Published - 2018 Oct 25
Event	43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018 - Nagoya, Japan Duration: 2018 Sep 9 → 2018 Sep 14

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume	2018-September
ISSN (Print)	2162-2027
ISSN (Electronic)	2162-2035

Conference

Conference	43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018
Country/Territory	Japan
City	Nagoya
Period	2018/09/09 → 2018/09/14

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/IRMMW-THz.2018.8509852

Cite this

Lin, M. T., & Lin, C. Y. (2018). Improved ESD Protection Design for High-Frequency Applications in CMOS Technology. In 2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018 [8509852] (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2018-September). IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz.2018.8509852

Improved ESD Protection Design for High-Frequency Applications in CMOS Technology. / Lin, Meng Ting; Lin, Chun Yu.

2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018. IEEE Computer Society, 2018. 8509852 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, MT & Lin, CY 2018, Improved ESD Protection Design for High-Frequency Applications in CMOS Technology. in 2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018., 8509852, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2018-September, IEEE Computer Society, 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018, Nagoya, Japan, 2018/09/09. https://doi.org/10.1109/IRMMW-THz.2018.8509852

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title = "Improved ESD Protection Design for High-Frequency Applications in CMOS Technology",

abstract = "An improved electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power-rail ESD clamp circuit is presented to protect the high-frequency integrated circuits in CMOS process. Experimental results show that the improved design can achieve higher ESD robustness without degrading the high-frequency performance. Based on its good performances during ESD stress and high-frequency operating conditions, the improved design is very suitable for ESD protection.",

author = "Lin, {Meng Ting} and Lin, {Chun Yu}",

note = "Funding Information: This work was supported in part by the Ministry of Science and Technology (MOST), Taiwan, under Contracts of MOST 107-2622-E-003-001-CC2 and MOST 106-2221-E-003-033, and in part by Amazing Microelectronic Corp., Taiwan. The authors would like to thank National Chip Implementation Center (CIC), Taiwan, for the support of chip fabrication, and Hanwa Electronic Ind. Co., Ltd., Japan, for setting up the ESD Publisher Copyright: {\textcopyright} 2018 IEEE.; 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018 ; Conference date: 09-09-2018 Through 14-09-2018",

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language = "English",

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N2 - An improved electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power-rail ESD clamp circuit is presented to protect the high-frequency integrated circuits in CMOS process. Experimental results show that the improved design can achieve higher ESD robustness without degrading the high-frequency performance. Based on its good performances during ESD stress and high-frequency operating conditions, the improved design is very suitable for ESD protection.

AB - An improved electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power-rail ESD clamp circuit is presented to protect the high-frequency integrated circuits in CMOS process. Experimental results show that the improved design can achieve higher ESD robustness without degrading the high-frequency performance. Based on its good performances during ESD stress and high-frequency operating conditions, the improved design is very suitable for ESD protection.

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Improved ESD Protection Design for High-Frequency Applications in CMOS Technology

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