Improved ESD Protection Design for High-Frequency Applications in CMOS Technology

Meng Ting Lin, Chun Yu Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An improved electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power-rail ESD clamp circuit is presented to protect the high-frequency integrated circuits in CMOS process. Experimental results show that the improved design can achieve higher ESD robustness without degrading the high-frequency performance. Based on its good performances during ESD stress and high-frequency operating conditions, the improved design is very suitable for ESD protection.

Original languageEnglish
Title of host publication2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018
PublisherIEEE Computer Society
ISBN (Electronic)9781538638095
DOIs
Publication statusPublished - 2018 Oct 25
Event43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018 - Nagoya, Japan
Duration: 2018 Sep 92018 Sep 14

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2018-September
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018
CountryJapan
CityNagoya
Period18/9/918/9/14

Fingerprint

Electrostatic discharge
Clamping devices
Thyristors
Integrated circuits
Rails
Diodes
Networks (circuits)

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Lin, M. T., & Lin, C. Y. (2018). Improved ESD Protection Design for High-Frequency Applications in CMOS Technology. In 2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018 [8509852] (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2018-September). IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz.2018.8509852

Improved ESD Protection Design for High-Frequency Applications in CMOS Technology. / Lin, Meng Ting; Lin, Chun Yu.

2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018. IEEE Computer Society, 2018. 8509852 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lin, MT & Lin, CY 2018, Improved ESD Protection Design for High-Frequency Applications in CMOS Technology. in 2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018., 8509852, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2018-September, IEEE Computer Society, 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018, Nagoya, Japan, 18/9/9. https://doi.org/10.1109/IRMMW-THz.2018.8509852
Lin MT, Lin CY. Improved ESD Protection Design for High-Frequency Applications in CMOS Technology. In 2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018. IEEE Computer Society. 2018. 8509852. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). https://doi.org/10.1109/IRMMW-THz.2018.8509852
Lin, Meng Ting ; Lin, Chun Yu. / Improved ESD Protection Design for High-Frequency Applications in CMOS Technology. 2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018. IEEE Computer Society, 2018. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).
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