Improved ESD Protection Design for High-Frequency Applications in CMOS Technology

Meng Ting Lin, Chun Yu Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An improved electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power-rail ESD clamp circuit is presented to protect the high-frequency integrated circuits in CMOS process. Experimental results show that the improved design can achieve higher ESD robustness without degrading the high-frequency performance. Based on its good performances during ESD stress and high-frequency operating conditions, the improved design is very suitable for ESD protection.

Original languageEnglish
Title of host publication2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018
PublisherIEEE Computer Society
ISBN (Electronic)9781538638095
DOIs
Publication statusPublished - 2018 Oct 25
Event43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018 - Nagoya, Japan
Duration: 2018 Sep 92018 Sep 14

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2018-September
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018
CountryJapan
CityNagoya
Period18/9/918/9/14

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ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Lin, M. T., & Lin, C. Y. (2018). Improved ESD Protection Design for High-Frequency Applications in CMOS Technology. In 2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018 [8509852] (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2018-September). IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz.2018.8509852