Improved electroluminescence of InAs quantum dots with strain reducing layer

Nien Tze Yeh; Tzer En Nee; Jen Inn Chyi; Chih Ta Chia; Tzu Min Hsu; Chien Chi Huang

doi:10.1016/S0022-0248(01)00985-X

Improved electroluminescence of InAs quantum dots with strain reducing layer

Nien Tze Yeh, Tzer En Nee, Jen Inn Chyi^*, Chih Ta Chia, Tzu Min Hsu, Chien Chi Huang

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 μm is obtained as InAs quantum dots (QDs) are covered with a thin InGaAs SRL. For the same sample, the full-width at half-maximum of the ground state emission peak is as narrow as 19 meV at low injection current, and less than 40 meV even at saturation condition. It is also found that the slope efficiency of the diode is higher than that of the other samples in the linear region and its light output saturation level is higher because of the higher density of QDs.

Original language	English
Pages (from-to)	1044-1048
Number of pages	5
Journal	Journal of Crystal Growth
Volume	227-228
DOIs	https://doi.org/10.1016/S0022-0248(01)00985-X
Publication status	Published - 2001 Jul
Event	11th International Conference on Molecular Beam Epitaxy - Bijing, China Duration: 2000 Sept 11 → 2000 Sept 15

Keywords

A3. Molecular beam epitaxy
A3. Quantum dots

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(01)00985-X

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@article{f810595ef5964b9280efbc5cf092115f,

title = "Improved electroluminescence of InAs quantum dots with strain reducing layer",

abstract = "The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 μm is obtained as InAs quantum dots (QDs) are covered with a thin InGaAs SRL. For the same sample, the full-width at half-maximum of the ground state emission peak is as narrow as 19 meV at low injection current, and less than 40 meV even at saturation condition. It is also found that the slope efficiency of the diode is higher than that of the other samples in the linear region and its light output saturation level is higher because of the higher density of QDs.",

keywords = "A3. Molecular beam epitaxy, A3. Quantum dots",

author = "Yeh, {Nien Tze} and Nee, {Tzer En} and Chyi, {Jen Inn} and Chia, {Chih Ta} and Hsu, {Tzu Min} and Huang, {Chien Chi}",

note = "Funding Information: The support from the MBE laboratory of the Center for Optical Sciences at National Central University is acknowledged. This work was supported by the National Science Council of ROC under Contract No. NSC 89-2215-E-008-025.; 11th International Conference on Molecular Beam Epitaxy ; Conference date: 11-09-2000 Through 15-09-2000",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00985-X",

language = "English",

volume = "227-228",

pages = "1044--1048",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

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TY - JOUR

T1 - Improved electroluminescence of InAs quantum dots with strain reducing layer

AU - Yeh, Nien Tze

AU - Nee, Tzer En

AU - Chyi, Jen Inn

AU - Chia, Chih Ta

AU - Hsu, Tzu Min

AU - Huang, Chien Chi

N1 - Funding Information: The support from the MBE laboratory of the Center for Optical Sciences at National Central University is acknowledged. This work was supported by the National Science Council of ROC under Contract No. NSC 89-2215-E-008-025.

PY - 2001/7

Y1 - 2001/7

N2 - The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 μm is obtained as InAs quantum dots (QDs) are covered with a thin InGaAs SRL. For the same sample, the full-width at half-maximum of the ground state emission peak is as narrow as 19 meV at low injection current, and less than 40 meV even at saturation condition. It is also found that the slope efficiency of the diode is higher than that of the other samples in the linear region and its light output saturation level is higher because of the higher density of QDs.

AB - The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 μm is obtained as InAs quantum dots (QDs) are covered with a thin InGaAs SRL. For the same sample, the full-width at half-maximum of the ground state emission peak is as narrow as 19 meV at low injection current, and less than 40 meV even at saturation condition. It is also found that the slope efficiency of the diode is higher than that of the other samples in the linear region and its light output saturation level is higher because of the higher density of QDs.

KW - A3. Molecular beam epitaxy

KW - A3. Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=0035399294&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035399294&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)00985-X

DO - 10.1016/S0022-0248(01)00985-X

M3 - Conference article

AN - SCOPUS:0035399294

SN - 0022-0248

VL - 227-228

SP - 1044

EP - 1048

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - 11th International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -

Improved electroluminescence of InAs quantum dots with strain reducing layer

Abstract

Keywords

ASJC Scopus subject areas

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