Improved electroluminescence of InAs quantum dots with strain reducing layer

Nien Tze Yeh, Tzer En Nee, Jen Inn Chyi*, Chih Ta Chia, Tzu Min Hsu, Chien Chi Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 μm is obtained as InAs quantum dots (QDs) are covered with a thin InGaAs SRL. For the same sample, the full-width at half-maximum of the ground state emission peak is as narrow as 19 meV at low injection current, and less than 40 meV even at saturation condition. It is also found that the slope efficiency of the diode is higher than that of the other samples in the linear region and its light output saturation level is higher because of the higher density of QDs.

Original languageEnglish
Pages (from-to)1044-1048
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - 2001 Jul
Event11th International Conference on Molecular Beam Epitaxy - Bijing, China
Duration: 2000 Sep 112000 Sep 15


  • A3. Molecular beam epitaxy
  • A3. Quantum dots

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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