Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Zhi Wei Zheng, Chun Hu Cheng, Kun I. Chou, Ming Liu, Albert Chin

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.

Original languageEnglish
Article number243507
JournalApplied Physics Letters
Volume101
Issue number24
DOIs
Publication statusPublished - 2012 Dec 10

Fingerprint

endurance
current distribution
nitrogen
electrodes
oxidation resistance
random access memory
high resistance
oxygen
polyimides
x ray spectroscopy
photoelectron spectroscopy
conduction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode. / Zheng, Zhi Wei; Cheng, Chun Hu; Chou, Kun I.; Liu, Ming; Chin, Albert.

In: Applied Physics Letters, Vol. 101, No. 24, 243507, 10.12.2012.

Research output: Contribution to journalArticle

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