Abstract
Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.
| Original language | English |
|---|---|
| Article number | 243507 |
| Journal | Applied Physics Letters |
| Volume | 101 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2012 Dec 10 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode. / Zheng, Zhi Wei; Cheng, Chun Hu; Chou, Kun I.; Liu, Ming; Chin, Albert.
In: Applied Physics Letters, Vol. 101, No. 24, 243507, 10.12.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode
AU - Zheng, Zhi Wei
AU - Cheng, Chun Hu
AU - Chou, Kun I.
AU - Liu, Ming
AU - Chin, Albert
PY - 2012/12/10
Y1 - 2012/12/10
N2 - Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.
AB - Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.
UR - http://www.scopus.com/inward/record.url?scp=84871326659&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84871326659&partnerID=8YFLogxK
U2 - 10.1063/1.4772003
DO - 10.1063/1.4772003
M3 - Article
AN - SCOPUS:84871326659
VL - 101
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
M1 - 243507
ER -