Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Zhi Wei Zheng; Chun Hu Cheng; Kun I. Chou; Ming Liu; Albert Chin

doi:10.1063/1.4772003

Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Zhi Wei Zheng, Chun Hu Cheng, Kun I. Chou, Ming Liu, Albert Chin

Department of Mechatronic Engineering

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeO_x/TiO_y/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.

Original language	English
Article number	243507
Journal	Applied Physics Letters
Volume	101
Issue number	24
DOIs	https://doi.org/10.1063/1.4772003
Publication status	Published - 2012 Dec 10

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Zheng, Z. W., Cheng, C. H., Chou, K. I., Liu, M., & Chin, A. (2012). Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode. Applied Physics Letters, 101(24), [243507]. https://doi.org/10.1063/1.4772003

@article{c4ba5ffca504474a896025eef0e62d1f,

title = "Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode",

abstract = "Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.",

author = "Zheng, {Zhi Wei} and Cheng, {Chun Hu} and Chou, {Kun I.} and Ming Liu and Albert Chin",

year = "2012",

month = dec,

day = "10",

doi = "10.1063/1.4772003",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

AU - Chou, Kun I.

AU - Liu, Ming

AU - Chin, Albert

PY - 2012/12/10

Y1 - 2012/12/10

N2 - Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.

AB - Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.

UR - http://www.scopus.com/inward/record.url?scp=84871326659&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871326659&partnerID=8YFLogxK

U2 - 10.1063/1.4772003

DO - 10.1063/1.4772003

M3 - Article

AN - SCOPUS:84871326659

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 243507

ER -