Improve Hole Collection by Interfacial Chemical Redox Reaction at a Mesoscopic NiO/CH3NH3PbI3 Heterojunction for Efficient Photovoltaic Cells

Ming Wei Lin, Kuo Chin Wang, Jeng Han Wang, Ming Hsien Li, Yu Ling Lai, Takuji Ohigashi, Nobuhiro Kosugi, Peter Chen*, Der Hsin Wei, Tzung Fang Guo, Yao Jane Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Organometal-trihalide-perovskite-based solar cells have exhibited high efficiencies when incorporated into mesoscopic NiO (NiOnc) hole-transport layers. The integration of a NiOnc-perovskite heterojunction provides an inorganic alternative as a p-type contact material with efficient hole extraction for perovskite-based solar cells. Herein the origin of such highly efficient carrier transport is studied in terms of electronic, chemical and transport properties of a NiOnc-perovskite heterojunction with X-ray photoelectron spectra, ultraviolet photoelectron spectra, near-edge X-ray absorption fine structure spectra, a scanning transmission X-ray microscope, and calculations of electronic structure. A pronounced chemical redox reaction is found at an NiOnc-perovskite heterojunction such that PbI2 is oxidized to PbO with subsequent formation of hole-dopant CH3NH3PbI3–2δOδ at the heterojunction. The generation of hole-doping CH3NH3PbI3–2δOδ induced by the redox reaction at the NiOnc/perovskite heterojunction plays a significant role to facilitate the carrier transport, and thus enhances the photovoltaic efficiencies.

Original languageEnglish
Article number1600135
JournalAdvanced Materials Interfaces
Volume3
Issue number17
DOIs
Publication statusPublished - 2016 Sept 6

Keywords

  • CHNHPbI
  • CHNHPbIO
  • hole doping
  • interfaces
  • mesoscopic NiO
  • perovskites

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering

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