Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Chun Hu Cheng*, Chia Chi Fan, Chun Yuan Tu, Hsiao Hsuan Hsu, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.

Original languageEnglish
Article number8543493
Pages (from-to)825-828
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number1
Publication statusPublished - 2019 Jan


  • Dopant free
  • ferroelectric
  • hafnium oxide
  • negative capacitance (NC) transistor
  • orthorhombic

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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