Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Chun Hu Cheng; Chia Chi Fan; Chun Yuan Tu; Hsiao Hsuan Hsu; Chun Yen Chang

doi:10.1109/TED.2018.2881099

Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Chun Hu Cheng^*, Chia Chi Fan, Chun Yuan Tu, Hsiao Hsuan Hsu, Chun Yen Chang

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

For the first time, we successfully demonstrated the dopant-free HfO₂ negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.

Original language	English
Article number	8543493
Pages (from-to)	825-828
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TED.2018.2881099
Publication status	Published - 2019 Jan

Keywords

Dopant free
ferroelectric
hafnium oxide
negative capacitance (NC) transistor
orthorhombic

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2018.2881099

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title = "Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor",

abstract = "For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.",

keywords = "Dopant free, ferroelectric, hafnium oxide, negative capacitance (NC) transistor, orthorhombic",

author = "Cheng, {Chun Hu} and Fan, {Chia Chi} and Tu, {Chun Yuan} and Hsu, {Hsiao Hsuan} and Chang, {Chun Yen}",

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AU - Cheng, Chun Hu

AU - Fan, Chia Chi

AU - Tu, Chun Yuan

AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

PY - 2019/1

Y1 - 2019/1

N2 - For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.

AB - For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.

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KW - ferroelectric

KW - hafnium oxide

KW - negative capacitance (NC) transistor

KW - orthorhombic

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Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Abstract

Keywords

ASJC Scopus subject areas

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