TY - GEN
T1 - Implementation of a Current Linear Regulator Based on a GaN HEMT for Laser Diode Manipulations
AU - Pai, Kai Jun
AU - Lin, Chang Hua
N1 - Publisher Copyright:
© 2023 The Korean Institute of Power Electronics.
PY - 2023
Y1 - 2023
N2 - In this study, a gallium nitride (GaN) high electron mobility transistor (HEMT) combined with the operational amplifier was applied to develop a two-level linear regulator (TLLR). Using the TLLR, the operating current of the laser diode can be formed in the constant-current or pulse-width modulation mode to emit the continuous-wave or short-pulsed laser, respectively. When the operating current of the laser diode was operated at the high-frequency PWM, the parasitic elements on the GaN HEMT, laser diodes, print-circuit board (PCB), and power wires influence the rising-edge slope of the laser operating current. In accordance with the physical packages of the GaN HEMT and laser diode, their equivalent circuit model parameters were provided in this study; therefore, the TLLR simulation circuit with its parasitic element was established. The simulation and experiment waveforms can be obtained to confirm the developed TLLR.
AB - In this study, a gallium nitride (GaN) high electron mobility transistor (HEMT) combined with the operational amplifier was applied to develop a two-level linear regulator (TLLR). Using the TLLR, the operating current of the laser diode can be formed in the constant-current or pulse-width modulation mode to emit the continuous-wave or short-pulsed laser, respectively. When the operating current of the laser diode was operated at the high-frequency PWM, the parasitic elements on the GaN HEMT, laser diodes, print-circuit board (PCB), and power wires influence the rising-edge slope of the laser operating current. In accordance with the physical packages of the GaN HEMT and laser diode, their equivalent circuit model parameters were provided in this study; therefore, the TLLR simulation circuit with its parasitic element was established. The simulation and experiment waveforms can be obtained to confirm the developed TLLR.
KW - Gallium nitride
KW - continuous-wave short-pulsed
KW - high electron mobility transistor
KW - laser diode
KW - linear regulator
UR - http://www.scopus.com/inward/record.url?scp=85170642649&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85170642649&partnerID=8YFLogxK
U2 - 10.23919/ICPE2023-ECCEAsia54778.2023.10213598
DO - 10.23919/ICPE2023-ECCEAsia54778.2023.10213598
M3 - Conference contribution
AN - SCOPUS:85170642649
T3 - ICPE 2023-ECCE Asia - 11th International Conference on Power Electronics - ECCE Asia: Green World with Power Electronics
SP - 1756
EP - 1761
BT - ICPE 2023-ECCE Asia - 11th International Conference on Power Electronics - ECCE Asia
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th International Conference on Power Electronics - ECCE Asia, ICPE 2023-ECCE Asia
Y2 - 22 May 2023 through 25 May 2023
ER -