Impedance behavior of spin-valve transistor

T. Y. Peng, S. Y. Chen, L. C. Hsieh, C. K. Lo, Y. W. Huang, W. C. Chien, Y. D. Yao

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The magnetoimpedance (MZ) effect of the pseudo-spin-valve transistor (PSVT) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The PSVT can be regarded as a complex combination of resistors, inductors, and capacitors, while the impedance (Z) consists of a real part, the resistance (R), and an imaginary part, the reactance (X). Besides, all these components exhibit magnetic hysteresis. It is due to the frequency dependent behavior that R does not reach a minimum at the resonant frequency (fr). The frequency dependences of MZ and MX ratios cross zero at fx =6.5 MHz and at fr =3.65 MHz, respectively. The shape of magnetoreactance (MX) loop is reverse to the magnetoresistance (MR) loop; furthermore, MX ratio changes sign from negative at f< fr to positive at f> fr. The MZ loop also reverses shape and sign after crossing fx. For instance, the MZ loop with a ratio of 0.077% at 6 MHz switches to -0.086% and -0.125% at 7 and 8 MHz, respectively.

Original languageEnglish
Article number08H710
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
Publication statusPublished - 2006 May 25

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transistors
impedance
reactance
inductors
resistors
resonant frequencies
capacitors
switches
hysteresis
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Peng, T. Y., Chen, S. Y., Hsieh, L. C., Lo, C. K., Huang, Y. W., Chien, W. C., & Yao, Y. D. (2006). Impedance behavior of spin-valve transistor. Journal of Applied Physics, 99(8), [08H710]. https://doi.org/10.1063/1.2177125

Impedance behavior of spin-valve transistor. / Peng, T. Y.; Chen, S. Y.; Hsieh, L. C.; Lo, C. K.; Huang, Y. W.; Chien, W. C.; Yao, Y. D.

In: Journal of Applied Physics, Vol. 99, No. 8, 08H710, 25.05.2006.

Research output: Contribution to journalArticle

Peng, TY, Chen, SY, Hsieh, LC, Lo, CK, Huang, YW, Chien, WC & Yao, YD 2006, 'Impedance behavior of spin-valve transistor', Journal of Applied Physics, vol. 99, no. 8, 08H710. https://doi.org/10.1063/1.2177125
Peng TY, Chen SY, Hsieh LC, Lo CK, Huang YW, Chien WC et al. Impedance behavior of spin-valve transistor. Journal of Applied Physics. 2006 May 25;99(8). 08H710. https://doi.org/10.1063/1.2177125
Peng, T. Y. ; Chen, S. Y. ; Hsieh, L. C. ; Lo, C. K. ; Huang, Y. W. ; Chien, W. C. ; Yao, Y. D. / Impedance behavior of spin-valve transistor. In: Journal of Applied Physics. 2006 ; Vol. 99, No. 8.
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