Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Chun Hu Cheng*, Ming Huei Lin, Hsin Yu Chen, Chia Chi Fan, Chien Liu, Hsiao Hsuan Hsu, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

6 Citations (Scopus)

Abstract

In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.

Original languageEnglish
Article number1800573
JournalPhysica Status Solidi - Rapid Research Letters
Volume13
Issue number5
DOIs
Publication statusPublished - 2019 May

Keywords

  • ferroelectric
  • hafnium zirconium oxide
  • negative capacitance
  • transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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