Abstract
In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
| Original language | English |
|---|---|
| Article number | 1800573 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 13 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2019 May 1 |
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Keywords
- ferroelectric
- hafnium zirconium oxide
- negative capacitance
- transistors
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
Cite this
Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors. / Cheng, Chun-Hu; Lin, Ming Huei; Chen, Hsin Yu; Fan, Chia Chi; Liu, Chien; Hsu, Hsiao Hsuan; Chang, Chun Yen.
In: Physica Status Solidi - Rapid Research Letters, Vol. 13, No. 5, 1800573, 01.05.2019.Research output: Contribution to journal › Letter
}
TY - JOUR
T1 - Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors
AU - Cheng, Chun-Hu
AU - Lin, Ming Huei
AU - Chen, Hsin Yu
AU - Fan, Chia Chi
AU - Liu, Chien
AU - Hsu, Hsiao Hsuan
AU - Chang, Chun Yen
PY - 2019/5/1
Y1 - 2019/5/1
N2 - In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
AB - In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
KW - ferroelectric
KW - hafnium zirconium oxide
KW - negative capacitance
KW - transistors
UR - http://www.scopus.com/inward/record.url?scp=85058488412&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85058488412&partnerID=8YFLogxK
U2 - 10.1002/pssr.201800573
DO - 10.1002/pssr.201800573
M3 - Letter
VL - 13
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 5
M1 - 1800573
ER -