TY - JOUR
T1 - Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors
AU - Cheng, Chun Hu
AU - Lin, Ming Huei
AU - Chen, Hsin Yu
AU - Fan, Chia Chi
AU - Liu, Chien
AU - Hsu, Hsiao Hsuan
AU - Chang, Chun Yen
PY - 2019/5
Y1 - 2019/5
N2 - In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
AB - In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
KW - ferroelectric
KW - hafnium zirconium oxide
KW - negative capacitance
KW - transistors
UR - http://www.scopus.com/inward/record.url?scp=85058488412&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85058488412&partnerID=8YFLogxK
UR - http://www.mendeley.com/research/impact-zirconium-doping-steep-subthreshold-switching-negative-capacitance-hafnium-oxide-based-transi
U2 - 10.1002/pssr.201800573
DO - 10.1002/pssr.201800573
M3 - Letter
AN - SCOPUS:85058488412
VL - 13
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 5
M1 - 1800573
ER -