Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Chun-Hu Cheng, Ming Huei Lin, Hsin Yu Chen, Chia Chi Fan, Chien Liu, Hsiao Hsuan Hsu, Chun Yen Chang

Research output: Contribution to journalLetter

1 Citation (Scopus)

Abstract

In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.

Original languageEnglish
Article number1800573
JournalPhysica Status Solidi - Rapid Research Letters
Volume13
Issue number5
DOIs
Publication statusPublished - 2019 May 1

Fingerprint

Hafnium oxides
hafnium oxides
Zirconium
capacitance switches
Transistors
Capacitance
transistors
capacitance
Doping (additives)
Ferroelectric materials
leakage
substitutes
Leakage currents
Substitution reactions
Switches
hafnium oxide

Keywords

  • ferroelectric
  • hafnium zirconium oxide
  • negative capacitance
  • transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors. / Cheng, Chun-Hu; Lin, Ming Huei; Chen, Hsin Yu; Fan, Chia Chi; Liu, Chien; Hsu, Hsiao Hsuan; Chang, Chun Yen.

In: Physica Status Solidi - Rapid Research Letters, Vol. 13, No. 5, 1800573, 01.05.2019.

Research output: Contribution to journalLetter

Cheng, Chun-Hu ; Lin, Ming Huei ; Chen, Hsin Yu ; Fan, Chia Chi ; Liu, Chien ; Hsu, Hsiao Hsuan ; Chang, Chun Yen. / Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors. In: Physica Status Solidi - Rapid Research Letters. 2019 ; Vol. 13, No. 5.
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AU - Cheng, Chun-Hu

AU - Lin, Ming Huei

AU - Chen, Hsin Yu

AU - Fan, Chia Chi

AU - Liu, Chien

AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

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N2 - In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.

AB - In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.

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