Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

H. W. Hsu, H. S. Huang, S. Y. Chen, M. C. Wang, K. C. Li, K. C. Lin, Chuan-Hsi Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress induced by CESL stressor and SiGe-channel on hot-carrier reliability of the strained nMOSFETs has been analyzed through experimental measurements and stress simulation results.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages89-90
Number of pages2
DOIs
Publication statusPublished - 2013 Mar 13
Event2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
Duration: 2013 Jan 22013 Jan 4

Publication series

NameProceedings - Winter Simulation Conference
ISSN (Print)0891-7736

Other

Other2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
CountrySingapore
CitySingapore
Period13/1/213/1/4

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Keywords

  • Contact-etch-stop-layer (CESL)
  • SiGe channel
  • hot carrier reliability

ASJC Scopus subject areas

  • Software
  • Modelling and Simulation
  • Computer Science Applications

Cite this

Hsu, H. W., Huang, H. S., Chen, S. Y., Wang, M. C., Li, K. C., Lin, K. C., & Liu, C-H. (2013). Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs. In Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 (pp. 89-90). [6465962] (Proceedings - Winter Simulation Conference). https://doi.org/10.1109/INEC.2013.6465962