Impact of stress and doping effects on the polarization behavior and electrical characteristics of hafnium–zirconium oxides

Hsiao Hsuan Hsu; Hsiu Ming Liu; Sheng Lee; Chun Hu Cheng

doi:10.1016/j.ceramint.2020.08.273

Impact of stress and doping effects on the polarization behavior and electrical characteristics of hafnium–zirconium oxides

Hsiao Hsuan Hsu^*, Hsiu Ming Liu, Sheng Lee, Chun Hu Cheng

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, we investigated the stress and doping effects of ferroelectric hafnium zirconium oxide (HfZrO) based on material analysis and electrical characteristics. The experimental results revealed that the ferroelectric crystalline phase is effectively transferred by mechanical stress of tantalum nitride (TaN) electrodes, and the origin of stress is mainly the thermal residual stress formed near the TaN and HfZrO interface. The ferroelectric polarization characteristics of HfZrO can be further modified by additional Al doping, which not only improves the leakage current of HfZrO due to the large bandgap of Al₂O₃ but also simultaneously stabilizes the ferroelectric domain switching under a large coercive field.

Original language	English
Pages (from-to)	2864-2868
Number of pages	5
Journal	Ceramics International
Volume	47
Issue number	2
DOIs	https://doi.org/10.1016/j.ceramint.2020.08.273
Publication status	Published - 2021 Jan 15

Keywords

Doping
Ferroelectric
Hafnium zirconium oxide
Hysteresis
Stress

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2020.08.273

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title = "Impact of stress and doping effects on the polarization behavior and electrical characteristics of hafnium–zirconium oxides",

abstract = "In this study, we investigated the stress and doping effects of ferroelectric hafnium zirconium oxide (HfZrO) based on material analysis and electrical characteristics. The experimental results revealed that the ferroelectric crystalline phase is effectively transferred by mechanical stress of tantalum nitride (TaN) electrodes, and the origin of stress is mainly the thermal residual stress formed near the TaN and HfZrO interface. The ferroelectric polarization characteristics of HfZrO can be further modified by additional Al doping, which not only improves the leakage current of HfZrO due to the large bandgap of Al2O3 but also simultaneously stabilizes the ferroelectric domain switching under a large coercive field.",

keywords = "Doping, Ferroelectric, Hafnium zirconium oxide, Hysteresis, Stress",

author = "Hsu, {Hsiao Hsuan} and Liu, {Hsiu Ming} and Sheng Lee and Cheng, {Chun Hu}",

note = "Funding Information: The authors thank the Ministry of Science and Technology (MOST) in Taiwan for the financial support (107-2221-E-027-060-MY2). Funding Information: The authors thank the Ministry of Science and Technology (MOST) in Taiwan for the financial support ( 107-2221-E-027-060-MY2 ). Publisher Copyright: {\textcopyright} 2020",

year = "2021",

month = jan,

day = "15",

doi = "10.1016/j.ceramint.2020.08.273",

language = "English",

volume = "47",

pages = "2864--2868",

journal = "Ceramics International",

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TY - JOUR

T1 - Impact of stress and doping effects on the polarization behavior and electrical characteristics of hafnium–zirconium oxides

AU - Hsu, Hsiao Hsuan

AU - Liu, Hsiu Ming

AU - Lee, Sheng

AU - Cheng, Chun Hu

N1 - Funding Information: The authors thank the Ministry of Science and Technology (MOST) in Taiwan for the financial support (107-2221-E-027-060-MY2). Funding Information: The authors thank the Ministry of Science and Technology (MOST) in Taiwan for the financial support ( 107-2221-E-027-060-MY2 ). Publisher Copyright: © 2020

PY - 2021/1/15

Y1 - 2021/1/15

N2 - In this study, we investigated the stress and doping effects of ferroelectric hafnium zirconium oxide (HfZrO) based on material analysis and electrical characteristics. The experimental results revealed that the ferroelectric crystalline phase is effectively transferred by mechanical stress of tantalum nitride (TaN) electrodes, and the origin of stress is mainly the thermal residual stress formed near the TaN and HfZrO interface. The ferroelectric polarization characteristics of HfZrO can be further modified by additional Al doping, which not only improves the leakage current of HfZrO due to the large bandgap of Al2O3 but also simultaneously stabilizes the ferroelectric domain switching under a large coercive field.

AB - In this study, we investigated the stress and doping effects of ferroelectric hafnium zirconium oxide (HfZrO) based on material analysis and electrical characteristics. The experimental results revealed that the ferroelectric crystalline phase is effectively transferred by mechanical stress of tantalum nitride (TaN) electrodes, and the origin of stress is mainly the thermal residual stress formed near the TaN and HfZrO interface. The ferroelectric polarization characteristics of HfZrO can be further modified by additional Al doping, which not only improves the leakage current of HfZrO due to the large bandgap of Al2O3 but also simultaneously stabilizes the ferroelectric domain switching under a large coercive field.

KW - Doping

KW - Ferroelectric

KW - Hafnium zirconium oxide

KW - Hysteresis

KW - Stress

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DO - 10.1016/j.ceramint.2020.08.273

M3 - Article

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SN - 0272-8842

VL - 47

SP - 2864

EP - 2868

JO - Ceramics International

JF - Ceramics International

IS - 2

ER -

Impact of stress and doping effects on the polarization behavior and electrical characteristics of hafnium–zirconium oxides

Abstract

Keywords

ASJC Scopus subject areas

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