Impact of stress and doping effects on the polarization behavior and electrical characteristics of hafnium–zirconium oxides

Hsiao Hsuan Hsu, Hsiu Ming Liu, Sheng Lee, Chun Hu Cheng

Research output: Contribution to journalArticle

Abstract

In this study, we investigated the stress and doping effects of ferroelectric hafnium zirconium oxide (HfZrO) based on material analysis and electrical characteristics. The experimental results revealed that the ferroelectric crystalline phase is effectively transferred by mechanical stress of tantalum nitride (TaN) electrodes, and the origin of stress is mainly the thermal residual stress formed near the TaN and HfZrO interface. The ferroelectric polarization characteristics of HfZrO can be further modified by additional Al doping, which not only improves the leakage current of HfZrO due to the large bandgap of Al2O3 but also simultaneously stabilizes the ferroelectric domain switching under a large coercive field.

Original languageEnglish
JournalCeramics International
DOIs
Publication statusAccepted/In press - 2020

Keywords

  • Doping
  • Ferroelectric
  • Hafnium zirconium oxide
  • Hysteresis
  • Stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

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