Impact of Si-Based Interfacial Layer for Ferroelectric Memory

Siddheswar Maikap; Asim Senapati; Zhao Feng Lou; Min Hung Lee

doi:10.23919/SNW57900.2023.10183960

Impact of Si-Based Interfacial Layer for Ferroelectric Memory

Siddheswar Maikap^*, Asim Senapati, Zhao Feng Lou, Min Hung Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Impact of sputter deposited Si-based interfacial layer (IL) in Ru/SiON(IL)/HZO/TiN structure shows long endurance of > 1010 cycles as compared to 107 cycles for the without IL memory, for the first time. Controlled oxygen vacancy in HZO film and oxygen in SiON IL observed by coercive field (Ermc) shift shows good o-phase and lower leakage current, resulting good 2Prmr value of > 28μ C/cm2.

Original language	English
Title of host publication	2023 Silicon Nanoelectronics Workshop, SNW 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	57-58
Number of pages	2
ISBN (Electronic)	9784863488083
DOIs	https://doi.org/10.23919/SNW57900.2023.10183960
Publication status	Published - 2023
Event	26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan Duration: 2023 Jun 11 → 2023 Jun 12

Publication series

Name	2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference	26th Silicon Nanoelectronics Workshop, SNW 2023
Country/Territory	Japan
City	Kyoto
Period	2023/06/11 → 2023/06/12

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

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10.23919/SNW57900.2023.10183960

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Impact of Si-Based Interfacial Layer for Ferroelectric Memory. / Maikap, Siddheswar; Senapati, Asim; Lou, Zhao Feng et al.
2023 Silicon Nanoelectronics Workshop, SNW 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 57-58 (2023 Silicon Nanoelectronics Workshop, SNW 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Maikap, S, Senapati, A, Lou, ZF & Lee, MH 2023, Impact of Si-Based Interfacial Layer for Ferroelectric Memory. in 2023 Silicon Nanoelectronics Workshop, SNW 2023. 2023 Silicon Nanoelectronics Workshop, SNW 2023, Institute of Electrical and Electronics Engineers Inc., pp. 57-58, 26th Silicon Nanoelectronics Workshop, SNW 2023, Kyoto, Japan, 2023/06/11. https://doi.org/10.23919/SNW57900.2023.10183960

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title = "Impact of Si-Based Interfacial Layer for Ferroelectric Memory",

abstract = "Impact of sputter deposited Si-based interfacial layer (IL) in Ru/SiON(IL)/HZO/TiN structure shows long endurance of > 1010 cycles as compared to 107 cycles for the without IL memory, for the first time. Controlled oxygen vacancy in HZO film and oxygen in SiON IL observed by coercive field (Ermc) shift shows good o-phase and lower leakage current, resulting good 2Prmr value of > 28μ C/cm2.",

author = "Siddheswar Maikap and Asim Senapati and Lou, {Zhao Feng} and Lee, {Min Hung}",

note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 26th Silicon Nanoelectronics Workshop, SNW 2023 ; Conference date: 11-06-2023 Through 12-06-2023",

year = "2023",

doi = "10.23919/SNW57900.2023.10183960",

language = "English",

series = "2023 Silicon Nanoelectronics Workshop, SNW 2023",

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AU - Maikap, Siddheswar

AU - Senapati, Asim

AU - Lou, Zhao Feng

AU - Lee, Min Hung

PY - 2023

Y1 - 2023

N2 - Impact of sputter deposited Si-based interfacial layer (IL) in Ru/SiON(IL)/HZO/TiN structure shows long endurance of > 1010 cycles as compared to 107 cycles for the without IL memory, for the first time. Controlled oxygen vacancy in HZO film and oxygen in SiON IL observed by coercive field (Ermc) shift shows good o-phase and lower leakage current, resulting good 2Prmr value of > 28μ C/cm2.

AB - Impact of sputter deposited Si-based interfacial layer (IL) in Ru/SiON(IL)/HZO/TiN structure shows long endurance of > 1010 cycles as compared to 107 cycles for the without IL memory, for the first time. Controlled oxygen vacancy in HZO film and oxygen in SiON IL observed by coercive field (Ermc) shift shows good o-phase and lower leakage current, resulting good 2Prmr value of > 28μ C/cm2.

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U2 - 10.23919/SNW57900.2023.10183960

DO - 10.23919/SNW57900.2023.10183960

M3 - Conference contribution

AN - SCOPUS:85167455458

T3 - 2023 Silicon Nanoelectronics Workshop, SNW 2023

SP - 57

EP - 58

BT - 2023 Silicon Nanoelectronics Workshop, SNW 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th Silicon Nanoelectronics Workshop, SNW 2023

Y2 - 11 June 2023 through 12 June 2023

ER -

Impact of Si-Based Interfacial Layer for Ferroelectric Memory

Abstract

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