Impact of Si-Based Interfacial Layer for Ferroelectric Memory

Siddheswar Maikap*, Asim Senapati, Zhao Feng Lou, Min Hung Lee*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Impact of sputter deposited Si-based interfacial layer (IL) in Ru/SiON(IL)/HZO/TiN structure shows long endurance of > 1010 cycles as compared to 107 cycles for the without IL memory, for the first time. Controlled oxygen vacancy in HZO film and oxygen in SiON IL observed by coercive field (Ermc) shift shows good o-phase and lower leakage current, resulting good 2Prmr value of > 28μ C/cm2.

Original languageEnglish
Title of host publication2023 Silicon Nanoelectronics Workshop, SNW 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages57-58
Number of pages2
ISBN (Electronic)9784863488083
DOIs
Publication statusPublished - 2023
Event26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan
Duration: 2023 Jun 112023 Jun 12

Publication series

Name2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference26th Silicon Nanoelectronics Workshop, SNW 2023
Country/TerritoryJapan
CityKyoto
Period2023/06/112023/06/12

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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