@inproceedings{46dea2d69c204e178179b2d5c0b902a6,
title = "Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms",
abstract = "We demonstrate a novel hybrid nonvolatile memory integrated with a charge trapping mechanism and a ferroelectric polarization effect. The hybrid memory features a large threshold voltage window of 2V, fast 20-ns program/erase time, tight switching margin, and long 1012-cycling endurance at 85oC. Such excellent endurance reliability at 85°C can be ascribed to the introduction of charge-trapping node into the design of memory structure that not only weakens temperature-dependent polarization relaxation, but also improves high-temperature endurance reliability.",
keywords = "charge trapping, endurance, ferroelectric polarization, nonvolatile memory, retention",
author = "Chiu, {Yu Chien} and Chang, {Chun Yen} and Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu} and Lee, {Min Hung}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Reliability Physics Symposium, IRPS 2015 ; Conference date: 19-04-2015 Through 23-04-2015",
year = "2015",
month = may,
day = "26",
doi = "10.1109/IRPS.2015.7112817",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "MY31--MY35",
booktitle = "2015 IEEE International Reliability Physics Symposium, IRPS 2015",
}