Abstract
We demonstrate a novel hybrid nonvolatile memory integrated with a charge trapping mechanism and a ferroelectric polarization effect. The hybrid memory features a large threshold voltage window of 2V, fast 20-ns program/erase time, tight switching margin, and long 1012-cycling endurance at 85oC. Such excellent endurance reliability at 85°C can be ascribed to the introduction of charge-trapping node into the design of memory structure that not only weakens temperature-dependent polarization relaxation, but also improves high-temperature endurance reliability.
Original language | English |
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Title of host publication | 2015 IEEE International Reliability Physics Symposium, IRPS 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | MY31-MY35 |
Volume | 2015-May |
ISBN (Electronic) | 9781467373623 |
DOIs | |
Publication status | Published - 2015 Jan 1 |
Event | IEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States Duration: 2015 Apr 19 → 2015 Apr 23 |
Other
Other | IEEE International Reliability Physics Symposium, IRPS 2015 |
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Country | United States |
City | Monterey |
Period | 2015/04/19 → 2015/04/23 |
Keywords
- charge trapping
- endurance
- ferroelectric polarization
- nonvolatile memory
- retention
ASJC Scopus subject areas
- Engineering(all)