Abstract
We demonstrate a novel hybrid nonvolatile memory integrated with a charge trapping mechanism and a ferroelectric polarization effect. The hybrid memory features a large threshold voltage window of 2V, fast 20-ns program/erase time, tight switching margin, and long 1012-cycling endurance at 85oC. Such excellent endurance reliability at 85°C can be ascribed to the introduction of charge-trapping node into the design of memory structure that not only weakens temperature-dependent polarization relaxation, but also improves high-temperature endurance reliability.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE International Reliability Physics Symposium, IRPS 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | MY31-MY35 |
| Volume | 2015-May |
| ISBN (Electronic) | 9781467373623 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
| Event | IEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States Duration: 2015 Apr 19 → 2015 Apr 23 |
Other
| Other | IEEE International Reliability Physics Symposium, IRPS 2015 |
|---|---|
| Country | United States |
| City | Monterey |
| Period | 15/4/19 → 15/4/23 |
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Keywords
- charge trapping
- endurance
- ferroelectric polarization
- nonvolatile memory
- retention
ASJC Scopus subject areas
- Engineering(all)
Cite this
Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms. / Chiu, Yu Chien; Chang, Chun Yen; Hsu, Hsiao Hsuan; Cheng, Chun-Hu; Lee, Min-Hung.
2015 IEEE International Reliability Physics Symposium, IRPS 2015. Vol. 2015-May Institute of Electrical and Electronics Engineers Inc., 2015. p. MY31-MY35 7112817.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms
AU - Chiu, Yu Chien
AU - Chang, Chun Yen
AU - Hsu, Hsiao Hsuan
AU - Cheng, Chun-Hu
AU - Lee, Min-Hung
PY - 2015/1/1
Y1 - 2015/1/1
N2 - We demonstrate a novel hybrid nonvolatile memory integrated with a charge trapping mechanism and a ferroelectric polarization effect. The hybrid memory features a large threshold voltage window of 2V, fast 20-ns program/erase time, tight switching margin, and long 1012-cycling endurance at 85oC. Such excellent endurance reliability at 85°C can be ascribed to the introduction of charge-trapping node into the design of memory structure that not only weakens temperature-dependent polarization relaxation, but also improves high-temperature endurance reliability.
AB - We demonstrate a novel hybrid nonvolatile memory integrated with a charge trapping mechanism and a ferroelectric polarization effect. The hybrid memory features a large threshold voltage window of 2V, fast 20-ns program/erase time, tight switching margin, and long 1012-cycling endurance at 85oC. Such excellent endurance reliability at 85°C can be ascribed to the introduction of charge-trapping node into the design of memory structure that not only weakens temperature-dependent polarization relaxation, but also improves high-temperature endurance reliability.
KW - charge trapping
KW - endurance
KW - ferroelectric polarization
KW - nonvolatile memory
KW - retention
UR - http://www.scopus.com/inward/record.url?scp=84942931522&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84942931522&partnerID=8YFLogxK
U2 - 10.1109/IRPS.2015.7112817
DO - 10.1109/IRPS.2015.7112817
M3 - Conference contribution
AN - SCOPUS:84942931522
VL - 2015-May
SP - MY31-MY35
BT - 2015 IEEE International Reliability Physics Symposium, IRPS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -