Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms

Yu Chien Chiu; Chun Yen Chang; Hsiao Hsuan Hsu; Chun-Hu Cheng; Min-Hung Lee

doi:10.1109/IRPS.2015.7112817

Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms

Yu Chien Chiu, Chun Yen Chang, Hsiao Hsuan Hsu, Chun-Hu Cheng, Min-Hung Lee

Department of Mechartronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We demonstrate a novel hybrid nonvolatile memory integrated with a charge trapping mechanism and a ferroelectric polarization effect. The hybrid memory features a large threshold voltage window of 2V, fast 20-ns program/erase time, tight switching margin, and long 10¹²-cycling endurance at 85^oC. Such excellent endurance reliability at 85°C can be ascribed to the introduction of charge-trapping node into the design of memory structure that not only weakens temperature-dependent polarization relaxation, but also improves high-temperature endurance reliability.

Original language	English
Title of host publication	2015 IEEE International Reliability Physics Symposium, IRPS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	MY31-MY35
Volume	2015-May
ISBN (Electronic)	9781467373623
DOIs	https://doi.org/10.1109/IRPS.2015.7112817
Publication status	Published - 2015 Jan 1
Event	IEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States Duration: 2015 Apr 19 → 2015 Apr 23

Other

Other	IEEE International Reliability Physics Symposium, IRPS 2015
Country/Territory	United States
City	Monterey
Period	2015/04/19 → 2015/04/23

Keywords

charge trapping
endurance
ferroelectric polarization
nonvolatile memory
retention

ASJC Scopus subject areas

Engineering(all)

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10.1109/IRPS.2015.7112817

Cite this

Chiu, Y. C., Chang, C. Y., Hsu, H. H., Cheng, C-H., & Lee, M-H. (2015). Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms. In 2015 IEEE International Reliability Physics Symposium, IRPS 2015 (Vol. 2015-May, pp. MY31-MY35). [7112817] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2015.7112817

Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms. / Chiu, Yu Chien; Chang, Chun Yen; Hsu, Hsiao Hsuan; Cheng, Chun-Hu ; Lee, Min-Hung.

2015 IEEE International Reliability Physics Symposium, IRPS 2015. Vol. 2015-May Institute of Electrical and Electronics Engineers Inc., 2015. p. MY31-MY35 7112817.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chiu, YC, Chang, CY, Hsu, HH, Cheng, C-H & Lee, M-H 2015, Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms. in 2015 IEEE International Reliability Physics Symposium, IRPS 2015. vol. 2015-May, 7112817, Institute of Electrical and Electronics Engineers Inc., pp. MY31-MY35, IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, United States, 2015/04/19. https://doi.org/10.1109/IRPS.2015.7112817

Chiu YC, Chang CY, Hsu HH, Cheng C-H , Lee M-H. Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms. In 2015 IEEE International Reliability Physics Symposium, IRPS 2015. Vol. 2015-May. Institute of Electrical and Electronics Engineers Inc. 2015. p. MY31-MY35. 7112817 https://doi.org/10.1109/IRPS.2015.7112817

Chiu, Yu Chien ; Chang, Chun Yen ; Hsu, Hsiao Hsuan ; Cheng, Chun-Hu ; Lee, Min-Hung. / Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms. 2015 IEEE International Reliability Physics Symposium, IRPS 2015. Vol. 2015-May Institute of Electrical and Electronics Engineers Inc., 2015. pp. MY31-MY35

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abstract = "We demonstrate a novel hybrid nonvolatile memory integrated with a charge trapping mechanism and a ferroelectric polarization effect. The hybrid memory features a large threshold voltage window of 2V, fast 20-ns program/erase time, tight switching margin, and long 1012-cycling endurance at 85oC. Such excellent endurance reliability at 85°C can be ascribed to the introduction of charge-trapping node into the design of memory structure that not only weakens temperature-dependent polarization relaxation, but also improves high-temperature endurance reliability.",

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Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms

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