Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

Chun Yu Lin; Pin Hsin Chang; Rong Kun Chang

doi:10.1109/TDMR.2015.2496364

Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

Chun Yu Lin, Pin Hsin Chang, Rong Kun Chang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.

Original language	English
Article number	7312970
Pages (from-to)	633-636
Number of pages	4
Journal	IEEE Transactions on Device and Materials Reliability
Volume	15
Issue number	4
DOIs	https://doi.org/10.1109/TDMR.2015.2496364
Publication status	Published - 2015 Dec

Keywords

Electrostatic discharge (ESD)
MOSFET
layout
pickup

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

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abstract = "The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.",

keywords = "Electrostatic discharge (ESD), MOSFET, layout, pickup",

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PY - 2015/12

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AB - The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.

KW - Electrostatic discharge (ESD)

KW - MOSFET

KW - layout

KW - pickup

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Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

Abstract

Keywords

ASJC Scopus subject areas

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