Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

Chun-Yu Lin, Pin Hsin Chang, Rong Kun Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.

Original languageEnglish
Article number7312970
Pages (from-to)633-636
Number of pages4
JournalIEEE Transactions on Device and Materials Reliability
Volume15
Issue number4
DOIs
Publication statusPublished - 2015 Dec 1

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Electrostatic discharge
Pickups
Metals
Silicon

Keywords

  • Electrostatic discharge (ESD)
  • MOSFET
  • layout
  • pickup

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cite this

Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process. / Lin, Chun-Yu; Chang, Pin Hsin; Chang, Rong Kun.

In: IEEE Transactions on Device and Materials Reliability, Vol. 15, No. 4, 7312970, 01.12.2015, p. 633-636.

Research output: Contribution to journalArticle

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