Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

Chun-Yu Lin, Pin Hsin Chang, Rong Kun Chang

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2 Citations (Scopus)


The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.

Original languageEnglish
Article number7312970
Pages (from-to)633-636
Number of pages4
JournalIEEE Transactions on Device and Materials Reliability
Issue number4
Publication statusPublished - 2015 Dec 1



  • Electrostatic discharge (ESD)
  • layout
  • pickup

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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