Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

H. W. Chen; C. H. Liu

doi:10.1016/j.microrel.2010.01.012

Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

H. W. Chen, C. H. Liu^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating HfSiON dielectrics with different compositions have been fabricated using atomic layer deposition (ALD) and their positive bias temperature instability (PBTI) reliability has also been investigated. The experimental results indicate that the oxide trapped charge (N_ot) dominates the PBTI degradation process, and after PBTI stress the increment of oxide trapped charges (ΔN_ot) is about 2-3 orders of magnitude greater than the generation of interface traps (ΔN_it). Moreover, higher Hf concentration results in more pre-existing traps but slower trap creation rate. The charge pumping technique has been utilized to characterize the interfacial parameters, ΔN_it, ΔN_ot, and ΔD_it (the generation of the density of interface trap per energy and area).

Original language	English
Pages (from-to)	614-617
Number of pages	4
Journal	Microelectronics Reliability
Volume	50
Issue number	5
DOIs	https://doi.org/10.1016/j.microrel.2010.01.012
Publication status	Published - 2010 May

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2010.01.012

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title = "Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics",

abstract = "Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating HfSiON dielectrics with different compositions have been fabricated using atomic layer deposition (ALD) and their positive bias temperature instability (PBTI) reliability has also been investigated. The experimental results indicate that the oxide trapped charge (Not) dominates the PBTI degradation process, and after PBTI stress the increment of oxide trapped charges (ΔNot) is about 2-3 orders of magnitude greater than the generation of interface traps (ΔNit). Moreover, higher Hf concentration results in more pre-existing traps but slower trap creation rate. The charge pumping technique has been utilized to characterize the interfacial parameters, ΔNit, ΔNot, and ΔDit (the generation of the density of interface trap per energy and area).",

author = "Chen, {H. W.} and Liu, {C. H.}",

year = "2010",

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doi = "10.1016/j.microrel.2010.01.012",

language = "English",

volume = "50",

pages = "614--617",

journal = "Microelectronics Reliability",

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TY - JOUR

T1 - Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

AU - Chen, H. W.

AU - Liu, C. H.

PY - 2010/5

Y1 - 2010/5

N2 - Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating HfSiON dielectrics with different compositions have been fabricated using atomic layer deposition (ALD) and their positive bias temperature instability (PBTI) reliability has also been investigated. The experimental results indicate that the oxide trapped charge (Not) dominates the PBTI degradation process, and after PBTI stress the increment of oxide trapped charges (ΔNot) is about 2-3 orders of magnitude greater than the generation of interface traps (ΔNit). Moreover, higher Hf concentration results in more pre-existing traps but slower trap creation rate. The charge pumping technique has been utilized to characterize the interfacial parameters, ΔNit, ΔNot, and ΔDit (the generation of the density of interface trap per energy and area).

AB - Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating HfSiON dielectrics with different compositions have been fabricated using atomic layer deposition (ALD) and their positive bias temperature instability (PBTI) reliability has also been investigated. The experimental results indicate that the oxide trapped charge (Not) dominates the PBTI degradation process, and after PBTI stress the increment of oxide trapped charges (ΔNot) is about 2-3 orders of magnitude greater than the generation of interface traps (ΔNit). Moreover, higher Hf concentration results in more pre-existing traps but slower trap creation rate. The charge pumping technique has been utilized to characterize the interfacial parameters, ΔNit, ΔNot, and ΔDit (the generation of the density of interface trap per energy and area).

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JO - Microelectronics Reliability

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Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

Abstract

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