Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

H. W. Chen, Chuan-Hsi Liu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating HfSiON dielectrics with different compositions have been fabricated using atomic layer deposition (ALD) and their positive bias temperature instability (PBTI) reliability has also been investigated. The experimental results indicate that the oxide trapped charge (Not) dominates the PBTI degradation process, and after PBTI stress the increment of oxide trapped charges (ΔNot) is about 2-3 orders of magnitude greater than the generation of interface traps (ΔNit). Moreover, higher Hf concentration results in more pre-existing traps but slower trap creation rate. The charge pumping technique has been utilized to characterize the interfacial parameters, ΔNit, ΔNot, and ΔDit (the generation of the density of interface trap per energy and area).

Original languageEnglish
Pages (from-to)614-617
Number of pages4
JournalMicroelectronics Reliability
Volume50
Issue number5
DOIs
Publication statusPublished - 2010 May 1

Fingerprint

Gate dielectrics
traps
Oxides
Atomic layer deposition
MOSFET devices
Temperature
temperature
oxides
atomic layer epitaxy
metal oxide semiconductors
Degradation
pumping
field effect transistors
degradation
Chemical analysis
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics. / Chen, H. W.; Liu, Chuan-Hsi.

In: Microelectronics Reliability, Vol. 50, No. 5, 01.05.2010, p. 614-617.

Research output: Contribution to journalArticle

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