Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Chia Chi Fan; Yu Chien Chiu; Chien Liu; Guan Lin Liou; Wen Wei Lai; Yi Ru Chen; Chun Hu Cheng; Chun Yen Chang

doi:10.1109/EDTM.2017.7947573

Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Chia Chi Fan
, Yu Chien Chiu
, Chien Liu
, Guan Lin Liou
, Wen Wei Lai
, Yi Ru Chen
, Chun Hu Cheng
, Chun Yen Chang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO₂/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

Original language	English
Title of host publication	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	224-225
Number of pages	2
ISBN (Electronic)	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947573
Publication status	Published - 2017 Jun 13
Event	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan Duration: 2017 Feb 28 → 2017 Mar 2

Publication series

Name	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/Territory	Japan
City	Toyama
Period	2017/02/28 → 2017/03/02

Keywords

Ferroelectric domain
HfZrO and HfON

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDTM.2017.7947573

Cite this

Fan, C. C., Chiu, Y. C., Liu, C., Liou, G. L., Lai, W. W., Chen, Y. R., Cheng, C. H., & Chang, C. Y. (2017). Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 224-225). Article 7947573 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947573

Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. / Fan, Chia Chi; Chiu, Yu Chien; Liu, Chien et al.
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 224-225 7947573 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fan, CC, Chiu, YC, Liu, C, Liou, GL, Lai, WW, Chen, YR, Cheng, CH & Chang, CY 2017, Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947573, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 224-225, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 2017/02/28. https://doi.org/10.1109/EDTM.2017.7947573

Fan CC, Chiu YC, Liu C, Liou GL, Lai WW, Chen YR et al. Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 224-225. 7947573. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). doi: 10.1109/EDTM.2017.7947573

Fan, Chia Chi ; Chiu, Yu Chien ; Liu, Chien et al. / Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 224-225 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

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title = "Impact of ferroelectric domain switching in nonvolatile charge-trapping memory",

abstract = "In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.",

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AB - In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

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Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

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