Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Chia Chi Fan; Yu Chien Chiu; Chien Liu; Guan Lin Liou; Wen Wei Lai; Yi Ru Chen; Chun Hu Cheng; Chun Yen Chang

doi:10.1109/EDTM.2017.7947573

Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Chia Chi Fan, Yu Chien Chiu, Chien Liu, Guan Lin Liou, Wen Wei Lai, Yi Ru Chen, Chun Hu Cheng, Chun Yen Chang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO₂/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

Original language	English
Title of host publication	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	224-225
Number of pages	2
ISBN (Electronic)	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947573
Publication status	Published - 2017 Jun 13
Event	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan Duration: 2017 Feb 28 → 2017 Mar 2

Publication series

Name	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/Territory	Japan
City	Toyama
Period	2017/02/28 → 2017/03/02

Keywords

Ferroelectric domain
HfZrO and HfON

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDTM.2017.7947573

Cite this

Fan, C. C., Chiu, Y. C., Liu, C., Liou, G. L., Lai, W. W., Chen, Y. R., Cheng, C. H., & Chang, C. Y. (2017). Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 224-225). Article 7947573 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947573

Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. / Fan, Chia Chi; Chiu, Yu Chien; Liu, Chien et al.
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 224-225 7947573 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fan, CC, Chiu, YC, Liu, C, Liou, GL, Lai, WW, Chen, YR, Cheng, CH & Chang, CY 2017, Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947573, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 224-225, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 2017/02/28. https://doi.org/10.1109/EDTM.2017.7947573

Fan CC, Chiu YC, Liu C, Liou GL, Lai WW, Chen YR et al. Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 224-225. 7947573. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). doi: 10.1109/EDTM.2017.7947573

Fan, Chia Chi ; Chiu, Yu Chien ; Liu, Chien et al. / Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 224-225 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

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abstract = "In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.",

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author = "Fan, {Chia Chi} and Chiu, {Yu Chien} and Chien Liu and Liou, {Guan Lin} and Lai, {Wen Wei} and Chen, {Yi Ru} and Cheng, {Chun Hu} and Chang, {Chun Yen}",

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AB - In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

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Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Abstract

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Keywords

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