Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Chia Chi Fan, Yu Chien Chiu, Chien Liu, Guan Lin Liou, Wen Wei Lai, Yi Ru Chen, Chun Hu Cheng, Chun Yen Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages224-225
Number of pages2
ISBN (Electronic)9781509046591
DOIs
Publication statusPublished - 2017 Jun 13
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: 2017 Feb 282017 Mar 2

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period2017/02/282017/03/02

Keywords

  • Ferroelectric domain
  • HfZrO and HfON

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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