Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Chia Chi Fan, Yu Chien Chiu, Chien Liu, Guan Lin Liou, Wen Wei Lai, Yi Ru Chen, Chun Hu Cheng, Chun Yen Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages224-225
Number of pages2
ISBN (Electronic)9781509046591
DOIs
Publication statusPublished - 2017 Jun 13
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: 2017 Feb 282017 Mar 2

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period17/2/2817/3/2

Fingerprint

Charge trapping
Ferroelectric materials
Data storage equipment
Polarization

Keywords

  • Ferroelectric domain
  • HfZrO and HfON

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Fan, C. C., Chiu, Y. C., Liu, C., Liou, G. L., Lai, W. W., Chen, Y. R., ... Chang, C. Y. (2017). Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 224-225). [7947573] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947573

Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. / Fan, Chia Chi; Chiu, Yu Chien; Liu, Chien; Liou, Guan Lin; Lai, Wen Wei; Chen, Yi Ru; Cheng, Chun Hu; Chang, Chun Yen.

2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 224-225 7947573 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fan, CC, Chiu, YC, Liu, C, Liou, GL, Lai, WW, Chen, YR, Cheng, CH & Chang, CY 2017, Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947573, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 224-225, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 17/2/28. https://doi.org/10.1109/EDTM.2017.7947573
Fan CC, Chiu YC, Liu C, Liou GL, Lai WW, Chen YR et al. Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 224-225. 7947573. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). https://doi.org/10.1109/EDTM.2017.7947573
Fan, Chia Chi ; Chiu, Yu Chien ; Liu, Chien ; Liou, Guan Lin ; Lai, Wen Wei ; Chen, Yi Ru ; Cheng, Chun Hu ; Chang, Chun Yen. / Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 224-225 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).
@inproceedings{10f1dbfe50974a859e5b556cac795a04,
title = "Impact of ferroelectric domain switching in nonvolatile charge-trapping memory",
abstract = "In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.",
keywords = "Ferroelectric domain, HfZrO and HfON",
author = "Fan, {Chia Chi} and Chiu, {Yu Chien} and Chien Liu and Liou, {Guan Lin} and Lai, {Wen Wei} and Chen, {Yi Ru} and Cheng, {Chun Hu} and Chang, {Chun Yen}",
year = "2017",
month = "6",
day = "13",
doi = "10.1109/EDTM.2017.7947573",
language = "English",
series = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "224--225",
booktitle = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",

}

TY - GEN

T1 - Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

AU - Fan, Chia Chi

AU - Chiu, Yu Chien

AU - Liu, Chien

AU - Liou, Guan Lin

AU - Lai, Wen Wei

AU - Chen, Yi Ru

AU - Cheng, Chun Hu

AU - Chang, Chun Yen

PY - 2017/6/13

Y1 - 2017/6/13

N2 - In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

AB - In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

KW - Ferroelectric domain

KW - HfZrO and HfON

UR - http://www.scopus.com/inward/record.url?scp=85022095816&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85022095816&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2017.7947573

DO - 10.1109/EDTM.2017.7947573

M3 - Conference contribution

AN - SCOPUS:85022095816

T3 - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

SP - 224

EP - 225

BT - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -