Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate

Yann Wen Lan; Linh Nam Nguyen; Shui Jin Lai; Ming Chou Lin; Chieh Hsiung Kuan; Chii Dong Chen

doi:10.1063/1.3619177

Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate

Yann Wen Lan^*, Linh Nam Nguyen, Shui Jin Lai, Ming Chou Lin, Chieh Hsiung Kuan, Chii Dong Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A movable carbon nanotube (CNT) cantilever gate is developed for the detection of embedded charge defects in suspended nanowires. The CNT gate is composed of a gold probe welded to a thick CNT, which is in turn attached to a thinner CNT. The rigid welding of the thicker CNT to the gold probe allows for precise placement along the measured nanowire while the joint between the thinner and thicker CNT absorbs the push and pull forces of repeated relocation. For demonstration purpose, the CNT gate determines the site of the embedded charges and measures the amount of trapped electrons.

Original language	English
Article number	053104
Journal	Applied Physics Letters
Volume	99
Issue number	5
DOIs	https://doi.org/10.1063/1.3619177
Publication status	Published - 2011 Aug 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3619177

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title = "Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate",

abstract = "A movable carbon nanotube (CNT) cantilever gate is developed for the detection of embedded charge defects in suspended nanowires. The CNT gate is composed of a gold probe welded to a thick CNT, which is in turn attached to a thinner CNT. The rigid welding of the thicker CNT to the gold probe allows for precise placement along the measured nanowire while the joint between the thinner and thicker CNT absorbs the push and pull forces of repeated relocation. For demonstration purpose, the CNT gate determines the site of the embedded charges and measures the amount of trapped electrons.",

author = "Lan, {Yann Wen} and Nguyen, {Linh Nam} and Lai, {Shui Jin} and Lin, {Ming Chou} and Kuan, {Chieh Hsiung} and Chen, {Chii Dong}",

note = "Funding Information: We thank Aravind K, Yi-Lun Lee, Hsun-Chung Wu, Ying-Feng Huang, and Tzu-Hui Hsu for their assistance during the course of this work. This research was funded by the National Science Council of Taiwan under contract Nos. NSC 98-2112-M-001-023-MY3 and NSC 98-2627-M-001-002. Technical support from NanoCore, the Core Facilities for Nanoscience and Nanotechnology at Academia Sinica, is acknowledged.",

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AU - Nguyen, Linh Nam

AU - Lai, Shui Jin

AU - Lin, Ming Chou

AU - Kuan, Chieh Hsiung

AU - Chen, Chii Dong

N1 - Funding Information: We thank Aravind K, Yi-Lun Lee, Hsun-Chung Wu, Ying-Feng Huang, and Tzu-Hui Hsu for their assistance during the course of this work. This research was funded by the National Science Council of Taiwan under contract Nos. NSC 98-2112-M-001-023-MY3 and NSC 98-2627-M-001-002. Technical support from NanoCore, the Core Facilities for Nanoscience and Nanotechnology at Academia Sinica, is acknowledged.

PY - 2011/8/1

Y1 - 2011/8/1

N2 - A movable carbon nanotube (CNT) cantilever gate is developed for the detection of embedded charge defects in suspended nanowires. The CNT gate is composed of a gold probe welded to a thick CNT, which is in turn attached to a thinner CNT. The rigid welding of the thicker CNT to the gold probe allows for precise placement along the measured nanowire while the joint between the thinner and thicker CNT absorbs the push and pull forces of repeated relocation. For demonstration purpose, the CNT gate determines the site of the embedded charges and measures the amount of trapped electrons.

AB - A movable carbon nanotube (CNT) cantilever gate is developed for the detection of embedded charge defects in suspended nanowires. The CNT gate is composed of a gold probe welded to a thick CNT, which is in turn attached to a thinner CNT. The rigid welding of the thicker CNT to the gold probe allows for precise placement along the measured nanowire while the joint between the thinner and thicker CNT absorbs the push and pull forces of repeated relocation. For demonstration purpose, the CNT gate determines the site of the embedded charges and measures the amount of trapped electrons.

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Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate

Abstract

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