Identical Pulse With Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

Z. F. Lou; C. Y. Liao; K. Y. Hsiang; Z. H. Li; S. H. Chang; T. C. Chen; M. H. Lee; J. Y. Lee

doi:10.1109/TED.2024.3480054

Identical Pulse With Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

Z. F. Lou
, C. Y. Liao
, K. Y. Hsiang
, Z. H. Li
, S. H. Chang
, T. C. Chen
, M. H. Lee^*
, J. Y. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity (α_P = 0.07) and applicable conductance ratio (G_Max/G_min, 1G) > 16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design.

Original language	English
Pages (from-to)	7437-7441
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	12
DOIs	https://doi.org/10.1109/TED.2024.3480054
Publication status	Published - 2024
Externally published	Yes

Keywords

Deep neural network (DNN)
detrapping
ferroelectric FET (FeFET)
synapse

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2024.3480054

Cite this

@article{138ef12f256c4763a2091b8708308e18,

title = "Identical Pulse With Opposite Polarity Assistance Detrapping{\textemdash}Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse",

abstract = "A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity (αP = 0.07) and applicable conductance ratio (GMax/Gmin, 1G) > 16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design.",

keywords = "Deep neural network (DNN), detrapping, ferroelectric FET (FeFET), synapse",

author = "Lou, \{Z. F.\} and Liao, \{C. Y.\} and Hsiang, \{K. Y.\} and Li, \{Z. H.\} and Chang, \{S. H.\} and Chen, \{T. C.\} and Lee, \{M. H.\} and Lee, \{J. Y.\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2024",

doi = "10.1109/TED.2024.3480054",

language = "English",

volume = "71",

pages = "7437--7441",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Identical Pulse With Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

AU - Lou, Z. F.

AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Li, Z. H.

AU - Chang, S. H.

AU - Chen, T. C.

AU - Lee, M. H.

AU - Lee, J. Y.

PY - 2024

Y1 - 2024

N2 - A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity (αP = 0.07) and applicable conductance ratio (GMax/Gmin, 1G) > 16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design.

AB - A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity (αP = 0.07) and applicable conductance ratio (GMax/Gmin, 1G) > 16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design.

KW - Deep neural network (DNN)

KW - detrapping

KW - ferroelectric FET (FeFET)

KW - synapse

UR - https://www.scopus.com/pages/publications/85208232423

UR - https://www.scopus.com/pages/publications/85208232423#tab=citedBy

U2 - 10.1109/TED.2024.3480054

DO - 10.1109/TED.2024.3480054

M3 - Article

AN - SCOPUS:85208232423

SN - 0018-9383

VL - 71

SP - 7437

EP - 7441

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Identical Pulse With Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this