Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO2Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory

C. Y. Liao, K. Y. Hsiang, S. H. Chang, S. H. Chiang, F. C. Hsieh, J. H. Liu, H. Liang, Z. F. Luo, C. Y. Lin, L. Y. Chen, V. P.H. Hu, M. H. Lee*

*Corresponding author for this work

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