Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO2Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory

C. Y. Liao; K. Y. Hsiang; S. H. Chang; S. H. Chiang; F. C. Hsieh; J. H. Liu; H. Liang; Z. F. Luo; C. Y. Lin; L. Y. Chen; V. P.H. Hu; M. H. Lee

doi:10.1149/2162-8777/ac08d8

Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO₂Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory

C. Y. Liao, K. Y. Hsiang, S. H. Chang, S. H. Chiang, F. C. Hsieh, J. H. Liu, H. Liang, Z. F. Luo, C. Y. Lin, L. Y. Chen, V. P.H. Hu, M. H. Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This study systematically investigates identical pulse stimulation for potentiation machine learning to achieve a linear potentiation non-linearity (α P) equal to 1.25 and a high conductance ratio >1,000x with 5 nm-thick HfZrO2 (HZO) ferroelectric field effect transistors (FeFET). The trade-off characteristics between conductance ratio and linearity are exhibited. The higher remnant polarization (Pr) for memory window (MW) enhancement leads to an increasing conductance ratio but degrades the non-linearity of the training curve. The optimized stimulation condition for the identical pulse is performed with a pulse width of 50 ns and low access voltage for HZO thicknesses from 15 to 5 nm. These highlighted merits provide an opportunity to integrate emerging devices such as computing-in-memory (CIM) applications in the future.

Original language	English
Article number	065015
Journal	ECS Journal of Solid State Science and Technology
Volume	10
Issue number	6
DOIs	https://doi.org/10.1149/2162-8777/ac08d8
Publication status	Published - 2021

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2162-8777/ac08d8

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Liao, C. Y., Hsiang, K. Y., Chang, S. H., Chiang, S. H., Hsieh, F. C., Liu, J. H., Liang, H., Luo, Z. F., Lin, C. Y., Chen, L. Y., Hu, V. P. H., & Lee, M. H. (2021). Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO₂Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory. ECS Journal of Solid State Science and Technology, 10(6), Article 065015. https://doi.org/10.1149/2162-8777/ac08d8

Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO₂Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory. / Liao, C. Y.; Hsiang, K. Y.; Chang, S. H. et al.
In: ECS Journal of Solid State Science and Technology, Vol. 10, No. 6, 065015, 2021.

Research output: Contribution to journal › Article › peer-review

Liao, CY, Hsiang, KY, Chang, SH, Chiang, SH, Hsieh, FC, Liu, JH, Liang, H, Luo, ZF, Lin, CY, Chen, LY, Hu, VPH & Lee, MH 2021, 'Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO₂Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory', ECS Journal of Solid State Science and Technology, vol. 10, no. 6, 065015. https://doi.org/10.1149/2162-8777/ac08d8

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abstract = "This study systematically investigates identical pulse stimulation for potentiation machine learning to achieve a linear potentiation non-linearity (α P) equal to 1.25 and a high conductance ratio >1,000x with 5 nm-thick HfZrO2 (HZO) ferroelectric field effect transistors (FeFET). The trade-off characteristics between conductance ratio and linearity are exhibited. The higher remnant polarization (Pr) for memory window (MW) enhancement leads to an increasing conductance ratio but degrades the non-linearity of the training curve. The optimized stimulation condition for the identical pulse is performed with a pulse width of 50 ns and low access voltage for HZO thicknesses from 15 to 5 nm. These highlighted merits provide an opportunity to integrate emerging devices such as computing-in-memory (CIM) applications in the future.",

author = "Liao, {C. Y.} and Hsiang, {K. Y.} and Chang, {S. H.} and Chiang, {S. H.} and Hsieh, {F. C.} and Liu, {J. H.} and H. Liang and Luo, {Z. F.} and Lin, {C. Y.} and Chen, {L. Y.} and Hu, {V. P.H.} and Lee, {M. H.}",

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AU - Liu, J. H.

AU - Liang, H.

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AB - This study systematically investigates identical pulse stimulation for potentiation machine learning to achieve a linear potentiation non-linearity (α P) equal to 1.25 and a high conductance ratio >1,000x with 5 nm-thick HfZrO2 (HZO) ferroelectric field effect transistors (FeFET). The trade-off characteristics between conductance ratio and linearity are exhibited. The higher remnant polarization (Pr) for memory window (MW) enhancement leads to an increasing conductance ratio but degrades the non-linearity of the training curve. The optimized stimulation condition for the identical pulse is performed with a pulse width of 50 ns and low access voltage for HZO thicknesses from 15 to 5 nm. These highlighted merits provide an opportunity to integrate emerging devices such as computing-in-memory (CIM) applications in the future.

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Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO₂Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory

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