Hydrogenated amorphous silicon thin film transistor fabricated on glass and polyimide substrate at 200°C

Jung Jie Huang, Min-Hung Lee, Cheng Ju Tsai, Yung Hui Yeh

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The properties of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) on both a glass substrate and on a colorless polyimide substrate were compared. Silicon nitride and hydrogenated amorphous silicon thin films were sequentially deposited at 200°C by plasma-enhanced chemical vapor deposition. The field-effect mobilities of the TFTs on glass and polyimide substrates were 0.35 and 0.42 cm 2 V -1 s -1 , respectively. The field-effect mobility of TFTs on the polyimide substrate was higher than that on the glass substrate. This was caused by the reduced surface roughness of the silicon nitride and hydrogenated amorphous silicon films on the polyimide substrate. Both on glass and polyimide substrates, the subthreshold voltage swing was about 0.5 V/dec and an on/off current ratio over of 10 7 was achieved. The superior electrical characteristics resulted from the increased hydrogen content in the hydrogenated amorphous silicon film and a higher breakdown voltage of the silicon nitride film was obtained.

Original languageEnglish
Pages (from-to)1295-1298
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number3 B
DOIs
Publication statusPublished - 2007 Mar 16

Fingerprint

Thin film transistors
Amorphous silicon
polyimides
Polyimides
amorphous silicon
transistors
Glass
glass
Substrates
thin films
Silicon nitride
silicon nitrides
silicon films
Plasma enhanced chemical vapor deposition
Electric breakdown
electrical faults
surface roughness
Surface roughness
vapor deposition
Thin films

Keywords

  • Amorphous silicon
  • Colorless polyimide
  • Thin-film transistor

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Hydrogenated amorphous silicon thin film transistor fabricated on glass and polyimide substrate at 200°C. / Huang, Jung Jie; Lee, Min-Hung; Tsai, Cheng Ju; Yeh, Yung Hui.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 3 B, 16.03.2007, p. 1295-1298.

Research output: Contribution to journalArticle

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N2 - The properties of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) on both a glass substrate and on a colorless polyimide substrate were compared. Silicon nitride and hydrogenated amorphous silicon thin films were sequentially deposited at 200°C by plasma-enhanced chemical vapor deposition. The field-effect mobilities of the TFTs on glass and polyimide substrates were 0.35 and 0.42 cm 2 V -1 s -1 , respectively. The field-effect mobility of TFTs on the polyimide substrate was higher than that on the glass substrate. This was caused by the reduced surface roughness of the silicon nitride and hydrogenated amorphous silicon films on the polyimide substrate. Both on glass and polyimide substrates, the subthreshold voltage swing was about 0.5 V/dec and an on/off current ratio over of 10 7 was achieved. The superior electrical characteristics resulted from the increased hydrogen content in the hydrogenated amorphous silicon film and a higher breakdown voltage of the silicon nitride film was obtained.

AB - The properties of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) on both a glass substrate and on a colorless polyimide substrate were compared. Silicon nitride and hydrogenated amorphous silicon thin films were sequentially deposited at 200°C by plasma-enhanced chemical vapor deposition. The field-effect mobilities of the TFTs on glass and polyimide substrates were 0.35 and 0.42 cm 2 V -1 s -1 , respectively. The field-effect mobility of TFTs on the polyimide substrate was higher than that on the glass substrate. This was caused by the reduced surface roughness of the silicon nitride and hydrogenated amorphous silicon films on the polyimide substrate. Both on glass and polyimide substrates, the subthreshold voltage swing was about 0.5 V/dec and an on/off current ratio over of 10 7 was achieved. The superior electrical characteristics resulted from the increased hydrogen content in the hydrogenated amorphous silicon film and a higher breakdown voltage of the silicon nitride film was obtained.

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