Hot carrier reliability of ald HfSiON gated MOSFETs with different compositions

H. W. Chen, S. Y. Chen, C. C. Lu, C. H. Liu, F. C. Chiu, Z. Y. Hsieh, H. S. Huang, L. W. Cheng, C. T. Lin, G. H. Ma, S. W. Sun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium-silicate (HfSiON) dielectrics with different compositions were fabricated and investigated for hot carrier reliability. The experimental results reveal that the channel hot carrier (CHC) stress is worse than drain avalanche hot carrier (DAHC) stress. Moreover, the experimental results also show that the increase of oxide trapped charges (ΔN ot) depends on Hf content and is about one order of magnitude larger than that of interface traps (ΔN it) after CHC or DAHC stress. Finally, some important interfacial parameters, including ΔN it δD it and ΔN ot, have also been characterized through the transconductance and subthrehsold swing (SS) methods.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Pages55-66
Number of pages12
Edition5
DOIs
Publication statusPublished - 2008 Dec 1
EventPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 15

Publication series

NameECS Transactions
Number5
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/15

ASJC Scopus subject areas

  • Engineering(all)

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    Chen, H. W., Chen, S. Y., Lu, C. C., Liu, C. H., Chiu, F. C., Hsieh, Z. Y., Huang, H. S., Cheng, L. W., Lin, C. T., Ma, G. H., & Sun, S. W. (2008). Hot carrier reliability of ald HfSiON gated MOSFETs with different compositions. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 55-66). (ECS Transactions; Vol. 16, No. 5). https://doi.org/10.1149/1.2981587