Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs

Chuan Hsi Liu*, Tung Ming Pan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.

Original languageEnglish
Pages (from-to)1799-1803
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - 2007 Jul
Externally publishedYes


  • Bulk-Si
  • Carrier mobility
  • Hot carrier (HC)
  • Negative bias temperature instability (NBTI)
  • Strained-Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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