TY - JOUR
T1 - Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs
AU - Liu, Chuan Hsi
AU - Pan, Tung Ming
N1 - Funding Information:
Manuscript received February 23, 2007; revised April 16, 2007. This work was supported by the National Science Council (NSC) of Taiwan, R.O.C., under Contract NSC-94-2115-E-182-009. The review of this brief was arranged by Editor M. J. Kumar. C.-H. Liu is with the Department of Electronics Engineering, Ming Chuan University, Taoyuan 333, Taiwan, R.O.C. (e-mail: [email protected]). T.-M. Pan is with the Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan, R.O.C. (e-mail: [email protected]). Digital Object Identifier 10.1109/TED.2007.898668
PY - 2007/7
Y1 - 2007/7
N2 - In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.
AB - In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.
KW - Bulk-Si
KW - Carrier mobility
KW - Hot carrier (HC)
KW - Negative bias temperature instability (NBTI)
KW - Strained-Si
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U2 - 10.1109/TED.2007.898668
DO - 10.1109/TED.2007.898668
M3 - Article
AN - SCOPUS:34447332819
SN - 0018-9383
VL - 54
SP - 1799
EP - 1803
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 7
ER -