Abstract
In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.
| Original language | English |
|---|---|
| Pages (from-to) | 1799-1803 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 54 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2007 Jul 1 |
Keywords
- Bulk-Si
- Carrier mobility
- Hot carrier (HC)
- Negative bias temperature instability (NBTI)
- Strained-Si
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Liu, C. H., & Pan, T. M. (2007). Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs. IEEE Transactions on Electron Devices, 54(7), 1799-1803. https://doi.org/10.1109/TED.2007.898668