Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs

Chuan Hsi Liu; Tung Ming Pan

doi:10.1109/TED.2007.898668

Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs

Chuan Hsi Liu, Tung Ming Pan

Department of Mechartronic Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed Si_xGe_1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO₂/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.

Original language	English
Pages (from-to)	1799-1803
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	7
DOIs	https://doi.org/10.1109/TED.2007.898668
Publication status	Published - 2007 Jul

Keywords

Bulk-Si
Carrier mobility
Hot carrier (HC)
Negative bias temperature instability (NBTI)
Strained-Si

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs",

abstract = "In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.",

keywords = "Bulk-Si, Carrier mobility, Hot carrier (HC), Negative bias temperature instability (NBTI), Strained-Si",

author = "Liu, {Chuan Hsi} and Pan, {Tung Ming}",

note = "Funding Information: Manuscript received February 23, 2007; revised April 16, 2007. This work was supported by the National Science Council (NSC) of Taiwan, R.O.C., under Contract NSC-94-2115-E-182-009. The review of this brief was arranged by Editor M. J. Kumar. C.-H. Liu is with the Department of Electronics Engineering, Ming Chuan University, Taoyuan 333, Taiwan, R.O.C. (e-mail: liuch@mcu.edu.tw). T.-M. Pan is with the Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan, R.O.C. (e-mail: tmpan@mail.cgu.edu.tw). Digital Object Identifier 10.1109/TED.2007.898668",

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AU - Liu, Chuan Hsi

AU - Pan, Tung Ming

N1 - Funding Information: Manuscript received February 23, 2007; revised April 16, 2007. This work was supported by the National Science Council (NSC) of Taiwan, R.O.C., under Contract NSC-94-2115-E-182-009. The review of this brief was arranged by Editor M. J. Kumar. C.-H. Liu is with the Department of Electronics Engineering, Ming Chuan University, Taoyuan 333, Taiwan, R.O.C. (e-mail: liuch@mcu.edu.tw). T.-M. Pan is with the Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan, R.O.C. (e-mail: tmpan@mail.cgu.edu.tw). Digital Object Identifier 10.1109/TED.2007.898668

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N2 - In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.

AB - In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.

KW - Bulk-Si

KW - Carrier mobility

KW - Hot carrier (HC)

KW - Negative bias temperature instability (NBTI)

KW - Strained-Si

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Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs

Abstract

Keywords

ASJC Scopus subject areas

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