Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs

Chuan Hsi Liu; Tung Ming Pan

doi:10.1109/TED.2007.898668

Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs

Chuan Hsi Liu, Tung Ming Pan

Department of Mechartronic Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed Si_xGe_1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO₂/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.

Original language	English
Pages (from-to)	1799-1803
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	7
DOIs	https://doi.org/10.1109/TED.2007.898668
Publication status	Published - 2007 Jul 1

Keywords

Bulk-Si
Carrier mobility
Hot carrier (HC)
Negative bias temperature instability (NBTI)
Strained-Si

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs",

abstract = "In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.",

keywords = "Bulk-Si, Carrier mobility, Hot carrier (HC), Negative bias temperature instability (NBTI), Strained-Si",

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AU - Pan, Tung Ming

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N2 - In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.

AB - In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.

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