Abstract
In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.
Original language | English |
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Pages (from-to) | 1799-1803 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 54 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2007 Jul |
Keywords
- Bulk-Si
- Carrier mobility
- Hot carrier (HC)
- Negative bias temperature instability (NBTI)
- Strained-Si
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering