Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain

Bing Fong Hsieh; Shu Tong Chang; Ming Hong Lee

doi:10.1109/INEC.2010.5424749

Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain

Bing Fong Hsieh, Shu Tong Chang, Ming Hong Lee^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Hole mobility in high Ge-content SiGe inversion layer is measured and simulated by a split C-V method and a quantized k.p method, respectively. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6x6 k.p Schrodinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of SiGe on (001) Si wafers. The calibrated model reproduces our experimental channel mobility measurements for biaxial strain SiGe on (001), (111) and (110) substrates.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	606-607
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424749
Publication status	Published - 2010
Externally published	Yes
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	2010/01/03 → 2010/01/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/INEC.2010.5424749

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Hsieh, B. F., Chang, S. T., & Lee, M. H. (2010). Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 606-607). Article 5424749 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424749

Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain. / Hsieh, Bing Fong; Chang, Shu Tong; Lee, Ming Hong.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 606-607 5424749 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hsieh, BF, Chang, ST & Lee, MH 2010, Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424749, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 606-607, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 2010/01/03. https://doi.org/10.1109/INEC.2010.5424749

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title = "Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain",

abstract = "Hole mobility in high Ge-content SiGe inversion layer is measured and simulated by a split C-V method and a quantized k.p method, respectively. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6x6 k.p Schrodinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of SiGe on (001) Si wafers. The calibrated model reproduces our experimental channel mobility measurements for biaxial strain SiGe on (001), (111) and (110) substrates.",

author = "Hsieh, {Bing Fong} and Chang, {Shu Tong} and Lee, {Ming Hong}",

year = "2010",

doi = "10.1109/INEC.2010.5424749",

language = "English",

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series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

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note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

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N2 - Hole mobility in high Ge-content SiGe inversion layer is measured and simulated by a split C-V method and a quantized k.p method, respectively. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6x6 k.p Schrodinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of SiGe on (001) Si wafers. The calibrated model reproduces our experimental channel mobility measurements for biaxial strain SiGe on (001), (111) and (110) substrates.

AB - Hole mobility in high Ge-content SiGe inversion layer is measured and simulated by a split C-V method and a quantized k.p method, respectively. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6x6 k.p Schrodinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of SiGe on (001) Si wafers. The calibrated model reproduces our experimental channel mobility measurements for biaxial strain SiGe on (001), (111) and (110) substrates.

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Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain

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