Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain

Bing Fong Hsieh, Shu Tong Chang, Ming Hong Lee

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Hole mobility in high Ge-content SiGe inversion layer is measured and simulated by a split C-V method and a quantized k.p method, respectively. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6x6 k.p Schrodinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of SiGe on (001) Si wafers. The calibrated model reproduces our experimental channel mobility measurements for biaxial strain SiGe on (001), (111) and (110) substrates.

    Original languageEnglish
    Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
    Pages606-607
    Number of pages2
    DOIs
    Publication statusPublished - 2010 May 5
    Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
    Duration: 2010 Jan 32010 Jan 8

    Publication series

    NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

    Other

    Other2010 3rd International Nanoelectronics Conference, INEC 2010
    Country/TerritoryChina
    CityHongkong
    Period2010/01/032010/01/08

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Fingerprint

    Dive into the research topics of 'Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain'. Together they form a unique fingerprint.

    Cite this