@article{984547903cbe459eb13d2d0870c8edf8,
title = "Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si",
abstract = "The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.",
author = "Peng, {C. Y.} and F. Yuan and Yu, {C. Y.} and Kuo, {P. S.} and Lee, {M. H.} and S. Maikap and Hsu, {C. H.} and Liu, {C. W.}",
note = "Funding Information: The National Taiwan University group is supported by the National Science Council, Taiwan, under Contract No. NSC-94-2215-E-002-040, and Taiwan Semiconductor Manufacturing Company (TSMC).",
year = "2007",
doi = "10.1063/1.2400394",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",
}