Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si

C. Y. Peng, F. Yuan, C. Y. Yu, P. S. Kuo, M. H. Lee, S. Maikap, C. H. Hsu, C. W. Liu

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Abstract

The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.

Original languageEnglish
Article number012114
JournalApplied Physics Letters
Volume90
Issue number1
DOIs
Publication statusPublished - 2007 Jan 15

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Peng, C. Y., Yuan, F., Yu, C. Y., Kuo, P. S., Lee, M. H., Maikap, S., Hsu, C. H., & Liu, C. W. (2007). Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si. Applied Physics Letters, 90(1), [012114]. https://doi.org/10.1063/1.2400394