Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si

C. Y. Peng, F. Yuan, C. Y. Yu, P. S. Kuo, M. H. Lee, S. Maikap, C. H. Hsu, C. W. Liu

    Research output: Contribution to journalArticlepeer-review

    26 Citations (Scopus)

    Abstract

    The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.

    Original languageEnglish
    Article number012114
    JournalApplied Physics Letters
    Volume90
    Issue number1
    DOIs
    Publication statusPublished - 2007

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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