Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices

J. Y. Wei; S. Maikap; M. H. Lee; C. C. Lee; C. W. Liu

doi:10.1016/j.sse.2005.10.032

Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices

J. Y. Wei, S. Maikap, M. H. Lee, C. C. Lee, C. W. Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Due to the Fermi level pinning effect on the hole confinement at the valence band offset, the capacitance-voltage (C-V) characteristics of NMOS capacitor exhibit more obvious plateau than that of PMOS capacitor, demonstrated by both experimental and simulated results. Using device simulation, the ratio of hole density at the oxide/strained-Si interface to that at the strained-Si/relaxed SiGe interface for both N and PMOSFETs is investigated. The much higher hole density ratio in PMOSFETs than that in NMOSFETs also reveals the Fermi level pinning effect.

Original language	English
Pages (from-to)	109-113
Number of pages	5
Journal	Solid-State Electronics
Volume	50
Issue number	2
DOIs	https://doi.org/10.1016/j.sse.2005.10.032
Publication status	Published - 2006 Feb
Externally published	Yes

Keywords

Device simulation
Hole confinement
MOS C-V
Pinning effect
Strain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2005.10.032

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title = "Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices",

abstract = "Due to the Fermi level pinning effect on the hole confinement at the valence band offset, the capacitance-voltage (C-V) characteristics of NMOS capacitor exhibit more obvious plateau than that of PMOS capacitor, demonstrated by both experimental and simulated results. Using device simulation, the ratio of hole density at the oxide/strained-Si interface to that at the strained-Si/relaxed SiGe interface for both N and PMOSFETs is investigated. The much higher hole density ratio in PMOSFETs than that in NMOSFETs also reveals the Fermi level pinning effect.",

keywords = "Device simulation, Hole confinement, MOS C-V, Pinning effect, Strain",

author = "Wei, {J. Y.} and S. Maikap and Lee, {M. H.} and Lee, {C. C.} and Liu, {C. W.}",

year = "2006",

month = feb,

doi = "10.1016/j.sse.2005.10.032",

language = "English",

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journal = "Solid-State Electronics",

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T1 - Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices

AU - Wei, J. Y.

AU - Maikap, S.

AU - Lee, M. H.

AU - Lee, C. C.

AU - Liu, C. W.

PY - 2006/2

Y1 - 2006/2

N2 - Due to the Fermi level pinning effect on the hole confinement at the valence band offset, the capacitance-voltage (C-V) characteristics of NMOS capacitor exhibit more obvious plateau than that of PMOS capacitor, demonstrated by both experimental and simulated results. Using device simulation, the ratio of hole density at the oxide/strained-Si interface to that at the strained-Si/relaxed SiGe interface for both N and PMOSFETs is investigated. The much higher hole density ratio in PMOSFETs than that in NMOSFETs also reveals the Fermi level pinning effect.

AB - Due to the Fermi level pinning effect on the hole confinement at the valence band offset, the capacitance-voltage (C-V) characteristics of NMOS capacitor exhibit more obvious plateau than that of PMOS capacitor, demonstrated by both experimental and simulated results. Using device simulation, the ratio of hole density at the oxide/strained-Si interface to that at the strained-Si/relaxed SiGe interface for both N and PMOSFETs is investigated. The much higher hole density ratio in PMOSFETs than that in NMOSFETs also reveals the Fermi level pinning effect.

KW - Device simulation

KW - Hole confinement

KW - MOS C-V

KW - Pinning effect

KW - Strain

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DO - 10.1016/j.sse.2005.10.032

M3 - Article

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SN - 0038-1101

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EP - 113

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 2

ER -

Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices

Abstract

Keywords

ASJC Scopus subject areas

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