Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

C. H. Cheng; P. C. Chen; Y. H. Wu; M. J. Wu; F. S. Yeh; Albert Chin

doi:10.1016/j.sse.2012.03.005

Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

C. H. Cheng^*
, P. C. Chen
, Y. H. Wu
, M. J. Wu
, F. S. Yeh
, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10 ⁶ cycling endurance are achieved in Ni/GeO _x/Ta ₂O _5-yN _y/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta ₂O _5- _yN _y for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.

Original language	English
Pages (from-to)	60-63
Number of pages	4
Journal	Solid-State Electronics
Volume	73
DOIs	https://doi.org/10.1016/j.sse.2012.03.005
Publication status	Published - 2012 Jul
Externally published	Yes

Keywords

GeO
Hopping conduction
RRAM
TaON
Uniformity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2012.03.005

Cite this

@article{a1a66da207e643129282c5cef921d98e,

title = "Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide",

abstract = "Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10 6 cycling endurance are achieved in Ni/GeO x/Ta 2O 5-yN y/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta 2O 5- yN y for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.",

keywords = "GeO, Hopping conduction, RRAM, TaON, Uniformity",

author = "Cheng, \{C. H.\} and Chen, \{P. C.\} and Wu, \{Y. H.\} and Wu, \{M. J.\} and Yeh, \{F. S.\} and Albert Chin",

note = "Funding Information: The paper publication was supported by National Science Council of Taiwan.",

year = "2012",

month = jul,

doi = "10.1016/j.sse.2012.03.005",

language = "English",

volume = "73",

pages = "60--63",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

AU - Cheng, C. H.

AU - Chen, P. C.

AU - Wu, Y. H.

AU - Wu, M. J.

AU - Yeh, F. S.

AU - Chin, Albert

N1 - Funding Information: The paper publication was supported by National Science Council of Taiwan.

PY - 2012/7

Y1 - 2012/7

N2 - Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10 6 cycling endurance are achieved in Ni/GeO x/Ta 2O 5-yN y/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta 2O 5- yN y for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.

AB - Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10 6 cycling endurance are achieved in Ni/GeO x/Ta 2O 5-yN y/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta 2O 5- yN y for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.

KW - GeO

KW - Hopping conduction

KW - RRAM

KW - TaON

KW - Uniformity

UR - https://www.scopus.com/pages/publications/84859934991

UR - https://www.scopus.com/pages/publications/84859934991#tab=citedBy

U2 - 10.1016/j.sse.2012.03.005

DO - 10.1016/j.sse.2012.03.005

M3 - Article

AN - SCOPUS:84859934991

SN - 0038-1101

VL - 73

SP - 60

EP - 63

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

Abstract

Keywords

ASJC Scopus subject areas

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