Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention

C. Y. Tsai, T. H. Lee, Chun-Hu Cheng, Albert Chin, Hong Wang

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We have fabricated the TaN- [SiO2 - LaAlO3] -ZrON- [LaAlO3 - SiO2] -Si charge-trapping flash device with highly scaled 3.6 nm equivalent- Si3 N4 -thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 °C, under very fast 100 μs and low ±16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As+ implantation that was significantly better than those of control device without ion implantation.

Original languageEnglish
Article number213504
JournalApplied Physics Letters
Volume97
Issue number21
DOIs
Publication statusPublished - 2010 Nov 22

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trapping
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ion implantation
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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention. / Tsai, C. Y.; Lee, T. H.; Cheng, Chun-Hu; Chin, Albert; Wang, Hong.

In: Applied Physics Letters, Vol. 97, No. 21, 213504, 22.11.2010.

Research output: Contribution to journalArticle

Tsai, C. Y. ; Lee, T. H. ; Cheng, Chun-Hu ; Chin, Albert ; Wang, Hong. / Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention. In: Applied Physics Letters. 2010 ; Vol. 97, No. 21.
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