Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance

C. Y. Tsai, T. H. Lee, Albert Chin, Hong Wang, C. H. Cheng, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125°C and excellent 106 endurance at a fast 100 μs and ±16 V program/erase. This is achieved using an As+-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125°C.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages5.4.1-5.4.4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

Fingerprint

endurance
Durability
trapping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Tsai, C. Y., Lee, T. H., Chin, A., Wang, H., Cheng, C. H., & Yeh, F. S. (2010). Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 5.4.1-5.4.4). [5703302] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703302

Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance. / Tsai, C. Y.; Lee, T. H.; Chin, Albert; Wang, Hong; Cheng, C. H.; Yeh, F. S.

2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 5.4.1-5.4.4 5703302 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsai, CY, Lee, TH, Chin, A, Wang, H, Cheng, CH & Yeh, FS 2010, Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703302, Technical Digest - International Electron Devices Meeting, IEDM, pp. 5.4.1-5.4.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703302
Tsai CY, Lee TH, Chin A, Wang H, Cheng CH, Yeh FS. Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance. In 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 5.4.1-5.4.4. 5703302. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703302
Tsai, C. Y. ; Lee, T. H. ; Chin, Albert ; Wang, Hong ; Cheng, C. H. ; Yeh, F. S. / Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance. 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. pp. 5.4.1-5.4.4 (Technical Digest - International Electron Devices Meeting, IEDM).
@inproceedings{27fc2ceff805479ea8c7acf2396dfca3,
title = "Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance",
abstract = "Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125°C and excellent 106 endurance at a fast 100 μs and ±16 V program/erase. This is achieved using an As+-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125°C.",
author = "Tsai, {C. Y.} and Lee, {T. H.} and Albert Chin and Hong Wang and Cheng, {C. H.} and Yeh, {F. S.}",
year = "2010",
month = "12",
day = "1",
doi = "10.1109/IEDM.2010.5703302",
language = "English",
isbn = "9781424474196",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "5.4.1--5.4.4",
booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

}

TY - GEN

T1 - Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance

AU - Tsai, C. Y.

AU - Lee, T. H.

AU - Chin, Albert

AU - Wang, Hong

AU - Cheng, C. H.

AU - Yeh, F. S.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125°C and excellent 106 endurance at a fast 100 μs and ±16 V program/erase. This is achieved using an As+-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125°C.

AB - Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125°C and excellent 106 endurance at a fast 100 μs and ±16 V program/erase. This is achieved using an As+-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125°C.

UR - http://www.scopus.com/inward/record.url?scp=79951816464&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951816464&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2010.5703302

DO - 10.1109/IEDM.2010.5703302

M3 - Conference contribution

AN - SCOPUS:79951816464

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 5.4.1-5.4.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

ER -