Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance

C. Y. Tsai, T. H. Lee, Albert Chin, Hong Wang, C. H. Cheng, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125°C and excellent 106 endurance at a fast 100 μs and ±16 V program/erase. This is achieved using an As+-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125°C.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages5.4.1-5.4.4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance'. Together they form a unique fingerprint.

  • Cite this

    Tsai, C. Y., Lee, T. H., Chin, A., Wang, H., Cheng, C. H., & Yeh, F. S. (2010). Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 5.4.1-5.4.4). [5703302] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703302