Highly scalable ballistic injection AND-type (BiAND) flash memory

Meng Yi Wu*, Sheng Huei Dai, Shu Fen Hu, Evans Chíng Sung Yang, Charles Ching Hsiang Hsu, Ya Chin King

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

Original languageEnglish
Pages (from-to)109-111
Number of pages3
JournalIEEE Transactions on Electron Devices
Issue number1
Publication statusPublished - 2006 Jan
Externally publishedYes


  • AND-type array
  • Ballistic
  • Flash memory
  • Split-gate flash

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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