Highly scalable ballistic injection AND-type (BiAND) flash memory

Meng Yi Wu; Sheng Huei Dai; Shu Fen Hu; Evans Chíng Sung Yang; Charles Ching Hsiang Hsu; Ya Chin King

doi:10.1109/TED.2005.860636

Highly scalable ballistic injection AND-type (BiAND) flash memory

Meng Yi Wu^*, Sheng Huei Dai, Shu Fen Hu, Evans Chíng Sung Yang, Charles Ching Hsiang Hsu, Ya Chin King

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

An AND-type split-gate Flash memory cell with a trench select gate and a buried n⁺ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F². Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

Original language	English
Pages (from-to)	109-111
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	1
DOIs	https://doi.org/10.1109/TED.2005.860636
Publication status	Published - 2006 Jan
Externally published	Yes

Keywords

AND-type array
Ballistic
Flash memory
Split-gate flash

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2005.860636

Cite this

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abstract = "An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.",

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AU - Wu, Meng Yi

AU - Dai, Sheng Huei

AU - Hu, Shu Fen

AU - Yang, Evans Chíng Sung

AU - Hsu, Charles Ching Hsiang

AU - King, Ya Chin

PY - 2006/1

Y1 - 2006/1

N2 - An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

AB - An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

KW - AND-type array

KW - Ballistic

KW - Flash memory

KW - Split-gate flash

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Highly scalable ballistic injection AND-type (BiAND) flash memory

Abstract

Keywords

ASJC Scopus subject areas

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