Highly scalable ballistic injection AND-type (BiAND) flash memory

Meng Yi Wu, Sheng Huei Dai, Shu Fen Hu, Evans Chíng Sung Yang, Charles Ching Hsiang Hsu, Ya Chin King

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

Original languageEnglish
Pages (from-to)109-111
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume53
Issue number1
DOIs
Publication statusPublished - 2006 Jan 1

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Keywords

  • AND-type array
  • Ballistic
  • Flash memory
  • Split-gate flash

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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