Highly scalable ballistic injection AND-type (BiAND) flash memory

Meng Yi Wu, Sheng Huei Dai, Shu-Fen Hu, Evans Chíng Sung Yang, Charles Ching Hsiang Hsu, Ya Chin King

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

Original languageEnglish
Pages (from-to)109-111
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume53
Issue number1
DOIs
Publication statusPublished - 2006 Jan 1

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Flash memory
Ballistics

Keywords

  • AND-type array
  • Ballistic
  • Flash memory
  • Split-gate flash

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Highly scalable ballistic injection AND-type (BiAND) flash memory. / Wu, Meng Yi; Dai, Sheng Huei; Hu, Shu-Fen; Yang, Evans Chíng Sung; Hsu, Charles Ching Hsiang; King, Ya Chin.

In: IEEE Transactions on Electron Devices, Vol. 53, No. 1, 01.01.2006, p. 109-111.

Research output: Contribution to journalArticle

Wu, Meng Yi ; Dai, Sheng Huei ; Hu, Shu-Fen ; Yang, Evans Chíng Sung ; Hsu, Charles Ching Hsiang ; King, Ya Chin. / Highly scalable ballistic injection AND-type (BiAND) flash memory. In: IEEE Transactions on Electron Devices. 2006 ; Vol. 53, No. 1. pp. 109-111.
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